Справочник MOSFET. FQPF11N50CF

 

FQPF11N50CF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQPF11N50CF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 43 nC
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для FQPF11N50CF

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQPF11N50CF Datasheet (PDF)

 ..1. Size:1291K  fairchild semi
 fqp11n50cf fqp11n50cf fqpf11n50cf.pdf pdf_icon

FQPF11N50CF

July 2005TMFRFETFQP11N50CF/FQPF11N50CF500V N-Channel MOSFETFeatures Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially tai

 7.1. Size:1213K  fairchild semi
 fqpf11n40ct.pdf pdf_icon

FQPF11N50CF

May 2008 QFETFQP11N40C/FQPF11N40C 400V N-Channel MOSFETFeatures Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC)DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especially

 7.2. Size:1216K  fairchild semi
 fqp11n40c fqpf11n40c.pdf pdf_icon

FQPF11N50CF

May 2008 QFETFQP11N40C/FQPF11N40C 400V N-Channel MOSFETFeatures Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC)DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especially

 7.3. Size:709K  fairchild semi
 fqpf11n40t.pdf pdf_icon

FQPF11N50CF

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been

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