Справочник MOSFET. SUN05A50ZF

 

SUN05A50ZF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SUN05A50ZF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 39.5 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для SUN05A50ZF

 

 

SUN05A50ZF Datasheet (PDF)

 ..1. Size:640K  auk
 sun05a50zf.pdf

SUN05A50ZF SUN05A50ZF

SUN05A50ZF New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.23 (Typ.) DS(on) Low gate charge: Q =17.5nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss Built-in ESD Diode 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN05A50ZF

 5.1. Size:603K  auk
 sun05a50zd.pdf

SUN05A50ZF SUN05A50ZF

SUN05A50ZD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.23 (Typ.) DS(on)D Low gate charge: Q =17.5nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss Built-in ESD Diode 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SUN05A50ZD

 8.1. Size:680K  auk
 sun05a25f.pdf

SUN05A50ZF SUN05A50ZF

SUN05A25F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.92 (Typ.) DS(on) Low gate charge: Q =6nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN05A25F SU

 9.1. Size:371K  auk
 sun0550f.pdf

SUN05A50ZF SUN05A50ZF

SUN0550F Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.23 (Typ.) Low gate charge: Qg=10.5nC (Typ.) Low reverse transfer capacitance: Crss=2pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0550F SUN0550 TO-220F

 9.2. Size:304K  auk
 sun0550d.pdf

SUN05A50ZF SUN05A50ZF

SUN0550D Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.23 (Typ.) Low gate charge: Qg=10.5nC (Typ.) D Low reverse transfer capacitance: Crss=2pF (Typ.) Halogen free device and RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: FTK50N10P

 

 
Back to Top