Справочник MOSFET. SUN830D

 

SUN830D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SUN830D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для SUN830D

 

 

SUN830D Datasheet (PDF)

 ..1. Size:431K  auk
 sun830d.pdf

SUN830D SUN830D

SUN830DAdvanced N-Ch Power MOSFETHIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.3 (Typ.) DS(on) Low gate charge: Q =13.5nC (Typ.) gD Low reverse transfer capacitance: C =8pF (Typ.) rss Halogen free device and RoHS compliant device 100% avalanche tested GOrdering Information SPart Number Marking Package TO-252

 0.1. Size:660K  auk
 sun830dn.pdf

SUN830D SUN830D

SUN830DN Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.3 (Typ.) DS(on) Low gate charge: Q =13.5nC (Typ.) D g Low reverse transfer capacitance: C =8pF (Typ.) rss Halogen free device and RoHS compliant device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Packa

 8.1. Size:482K  auk
 sun830f.pdf

SUN830D SUN830D

SUN830FNew Generation N-Ch Power MOSFETHIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.3 (Typ.) DS(on) Low gate charge: Q =13nC (Typ.) g Low reverse transfer capacitance: C =8pF (Typ.) rss RoHS compliant device 100% avalanche tested Ordering Information G D SPart Number Marking Package TO-220F-3L SUN830F SUN830 TO

 8.2. Size:583K  auk
 sun830i.pdf

SUN830D SUN830D

SUN830I Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BV =500V Min. DSS Low gate charge: Q =13.5nC (Typ.) g Low drain-source On resistance: R =1.3 (Typ.) DS(on) RoHS compliant device 100% avalanche tested G D S Ordering Information Part Number Marking Package I-PAK SUN830I SUN830 I-PAK Marking Information SUN Column

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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