AOCA36116C
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AOCA36116C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3.1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 24
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 30
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 4000
ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0031
Ohm
Тип корпуса: DFN3.2X2.1-10L
Аналог (замена) для AOCA36116C
-
подбор ⓘ MOSFET транзистора по параметрам
AOCA36116C
Datasheet (PDF)
..1. Size:592K aosemi
aoca36116c.pdf 
AOCA36116C24V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 24V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
7.1. Size:551K aosemi
aoca36102e.pdf 
AOCA36102E22V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 22V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
9.1. Size:590K aosemi
aoca32112e.pdf 
AOCA32112E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
9.2. Size:732K aosemi
aoca32317.pdf 
AOCA3231730V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) ESD protection RSS(ON) (at VGS=10V)
9.3. Size:761K aosemi
aoca33103e.pdf 
AOCA33103E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
9.4. Size:792K aosemi
aoca33104a.pdf 
AOCA33104A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
9.5. Size:602K aosemi
aoca32107e.pdf 
AOCA32107E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
9.6. Size:772K aosemi
aoca32106e.pdf 
AOCA32106E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
9.7. Size:770K aosemi
aoca35212e.pdf 
AOCA35212E24V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 24V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=10V)
9.8. Size:767K aosemi
aoca32301.pdf 
AOCA3230130V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) ESD protection RSS(ON) (at VGS=10V)
9.9. Size:577K aosemi
aoca32116e.pdf 
AOCA32116E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
9.10. Size:793K aosemi
aoca32108e.pdf 
AOCA32108E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
9.11. Size:817K aosemi
aoca33104e.pdf 
AOCA33104E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
9.12. Size:785K aosemi
aoca33102e.pdf 
AOCA33102E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
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