Справочник MOSFET. AOCA36116C

 

AOCA36116C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOCA36116C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 24 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4000 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm
   Тип корпуса: DFN3.2X2.1-10L

 Аналог (замена) для AOCA36116C

 

 

AOCA36116C Datasheet (PDF)

 ..1. Size:592K  aosemi
 aoca36116c.pdf

AOCA36116C AOCA36116C

AOCA36116C24V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 24V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 7.1. Size:551K  aosemi
 aoca36102e.pdf

AOCA36116C AOCA36116C

AOCA36102E22V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 22V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 9.1. Size:590K  aosemi
 aoca32112e.pdf

AOCA36116C AOCA36116C

AOCA32112E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 9.2. Size:732K  aosemi
 aoca32317.pdf

AOCA36116C AOCA36116C

AOCA3231730V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) ESD protection RSS(ON) (at VGS=10V)

 9.3. Size:761K  aosemi
 aoca33103e.pdf

AOCA36116C AOCA36116C

AOCA33103E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)

 9.4. Size:792K  aosemi
 aoca33104a.pdf

AOCA36116C AOCA36116C

AOCA33104A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)

 9.5. Size:602K  aosemi
 aoca32107e.pdf

AOCA36116C AOCA36116C

AOCA32107E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 9.6. Size:772K  aosemi
 aoca32106e.pdf

AOCA36116C AOCA36116C

AOCA32106E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 9.7. Size:770K  aosemi
 aoca35212e.pdf

AOCA36116C AOCA36116C

AOCA35212E24V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 24V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=10V)

 9.8. Size:767K  aosemi
 aoca32301.pdf

AOCA36116C AOCA36116C

AOCA3230130V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) ESD protection RSS(ON) (at VGS=10V)

 9.9. Size:577K  aosemi
 aoca32116e.pdf

AOCA36116C AOCA36116C

AOCA32116E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)

 9.10. Size:793K  aosemi
 aoca32108e.pdf

AOCA36116C AOCA36116C

AOCA32108E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 9.11. Size:817K  aosemi
 aoca33104e.pdf

AOCA36116C AOCA36116C

AOCA33104E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)

 9.12. Size:785K  aosemi
 aoca33102e.pdf

AOCA36116C AOCA36116C

AOCA33102E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)

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