AONS66814. Аналоги и основные параметры
Наименование производителя: AONS66814
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 500 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 310 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 1290 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для AONS66814
- подборⓘ MOSFET транзистора по параметрам
AONS66814 даташит
..1. Size:429K aosemi
aons66814.pdf 

AONS66814 TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V AlphaSGT2TM N-Channel Power MOSFET ID (at VGS=10V) 310A Low RDS(ON) RDS(ON) (at VGS=10V)
6.1. Size:424K aosemi
aons66811.pdf 

AONS66811 TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 287A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)
6.2. Size:427K aosemi
aons66817.pdf 

AONS66817 TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:362K aosemi
aons66402t.pdf 

AONS66402T TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
8.2. Size:313K aosemi
aons66916.pdf 

AONS66916 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.3. Size:370K aosemi
aons66524.pdf 

AONS66524 TM 150V N-Channel AlphaSGT General Description Product Summary VDS 150V Trench Power AlphaSGTTM technology ID (at VGS=20V) 56A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.4. Size:412K aosemi
aons66609.pdf 

AONS66609 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.5. Size:771K aosemi
aons66923.pdf 

AONS66923 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 47A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
8.6. Size:419K aosemi
aons66641t.pdf 

AONS66641T TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 325A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.7. Size:427K aosemi
aons66407.pdf 

AONS66407 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.8. Size:381K aosemi
aons66521.pdf 

AONS66521 150V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 150V Low RDS(ON) and Gate Charge ID (at VGS=10V) 100A Enhanced Robustness RDS(ON) (at VGS=10V)
8.9. Size:314K aosemi
aons66966.pdf 

AONS66966 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.10. Size:377K aosemi
aons66612.pdf 

AONS66612 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)
8.11. Size:411K aosemi
aons66620.pdf 

AONS66620 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
8.12. Size:340K aosemi
aons66917t.pdf 

AONS66917T TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.13. Size:416K aosemi
aons66908.pdf 

AONS66908 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 158A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
8.14. Size:419K aosemi
aons66919.pdf 

AONS66919 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
8.15. Size:414K aosemi
aons66408.pdf 

AONS66408 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)
8.16. Size:436K aosemi
aons66607.pdf 

AONS66607 60V N-Channel MOSFET General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 75A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
8.17. Size:762K aosemi
aons66920.pdf 

AONS66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
8.18. Size:415K aosemi
aons66415.pdf 

AONS66415 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 150A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.19. Size:440K aosemi
aons66605.pdf 

AONS66605 60V N-Channel MOSFET General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
8.20. Size:410K aosemi
aons66615.pdf 

AONS66615 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.21. Size:336K aosemi
aons66917.pdf 

AONS66917 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.23. Size:447K aosemi
aons66617.pdf 

AONS66617 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260 C reflow 175 C Junction temperature RDS(ON) (at VGS=10V)
8.24. Size:322K aosemi
aons66402.pdf 

AONS66402 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
8.25. Size:422K aosemi
aons66909.pdf 

AONS66909 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 160A Low RDS(ON) Excellent QG x RDS(ON) RDS(ON) (at VGS=10V)
8.26. Size:408K aosemi
aons66405t.pdf 

AONS66405T TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 385A Low RDS(ON)*QOSS and optimised switching performance. RDS(ON) (at VGS=10V)
8.27. Size:380K aosemi
aons66520.pdf 

AONS66520 TM 150V N-Channel AlphaSGT General Description Product Summary VDS 150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.28. Size:445K aosemi
aons66613.pdf 

AONS66613 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 196A MSL1 Rated 260 C reflow 175 C Junction temperature RDS(ON) (at VGS=10V)
8.29. Size:885K aosemi
aons660a70f.pdf 

AONS660A70F TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max
8.30. Size:407K aosemi
aons66641.pdf 

AONS66641 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.31. Size:715K aosemi
aons66612t.pdf 

AONS66612T TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.32. Size:416K aosemi
aons66609t.pdf 

AONS66609T TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 313A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.33. Size:345K aosemi
aons66916t.pdf 

AONS66916T TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 184A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.34. Size:720K aosemi
aons66614.pdf 

AONS66614 60V N-Channel AlphaSGT TM General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
8.35. Size:667K aosemi
aons660a60.pdf 

AONS660A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max
8.36. Size:328K aosemi
aons66406.pdf 

AONS66406 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 30A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
8.37. Size:428K aosemi
aons66615t.pdf 

AONS66615T TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 114A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Другие IGBT... AONS66614, AONS66615, AONS66615T, AONS66617, AONS66620, AONS66641, AONS66641T, AONS66811, IRF640, AONS66817, AONS66908, AONS66909, AONS66916T, AONS66917, AONS66917T, AONS66919, AONS66920