Справочник MOSFET. FDMC8854

 

FDMC8854 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMC8854
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 41 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
   Тип корпуса: MLP3.3X3.3
 

 Аналог (замена) для FDMC8854

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDMC8854 Datasheet (PDF)

 ..1. Size:354K  fairchild semi
 fdmc8854.pdf pdf_icon

FDMC8854

June 2014FDMC8854N-Channel Power Trench MOSFET 30V, 15A, 5.7mFeatures General Description Max rDS(on) = 5.7m at VGS = 10V, ID = 15AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 7.6m at VGS = 4.5V, ID = 13Aprocess. It has been optimized for power management Low Profile - 1mm max in Power 33applica

 8.1. Size:339K  fairchild semi
 fdmc8882.pdf pdf_icon

FDMC8854

September 2010FDMC8882N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m Features General Description Max rDS(on) = 14.3 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8.3 Abeen especially tailored to minimize the on-state resistance. This Hi

 8.2. Size:244K  fairchild semi
 fdmc8878.pdf pdf_icon

FDMC8854

December 2010FDMC8878N-Channel Power Trench MOSFET 30V, 16.5A, 14m Features General Description Max rDS(on) = 14m at VGS = 10V, ID = 9.6AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 17m at VGS = 4.5V, ID = 8.7Aprocess. It has been optimized for power management Low Profile - 0.8 mm max in MLP 3.3X3.

 8.3. Size:347K  fairchild semi
 fdmc8884.pdf pdf_icon

FDMC8854

October 2010FDMC8884N-Channel Power Trench MOSFET 30 V, 15 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7.2 Abeen especially tailored to minimize the on-state resistance. This High per

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQPF27P06 , FQPF2N60C , FCA20N60F109 , FQPF2N70 , FQPF2N80 , FCPF16N60 , FQPF30N06L , FQPF32N20C , IRFB3607 , FQPF33N10 , FDMS9600S , FQPF33N10L , FDP8442F085 , FQPF3N80C , FDMS8680 , FQPF45N15V2 , FQPF47P06 .

History: FCPF220N80

 

 
Back to Top

 


 
.