FDP8442F085. Аналоги и основные параметры
Наименование производителя: FDP8442F085
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 254 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm
Тип корпуса: TO220
Аналог (замена) для FDP8442F085
- подборⓘ MOSFET транзистора по параметрам
FDP8442F085 даташит
7.1. Size:400K fairchild semi
fdp8442 f085.pdf 

May 2010 FDP8442_F085 N-Channel PowerTrench MOSFET 40V, 80A, 3.1m Features Applications Automotive Engine Control Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repet
7.2. Size:291K fairchild semi
fdp8442.pdf 

June 2007 FDP8442 N-Channel PowerTrench MOSFET 40V, 80A, 3.1m Features Applications Automotive Engine Control Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repetitiv
8.1. Size:303K fairchild semi
fdp8441 f085.pdf 

September 2006 tm FDP8441 N-Channel PowerTrench MOSFET 40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta
8.2. Size:297K fairchild semi
fdp8443.pdf 

August 2007 FDP8443 tm N-Channel PowerTrench MOSFET 40V, 80A, 3.5m Applications Features Typ rDS(on) = 2.7m at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 142nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / A
8.3. Size:767K fairchild semi
fdp8440.pdf 

January 2009 FDP8440 tm N-Channel PowerTrench MOSFET 40V, 277A, 2.2m Features Application RDS(on) = 1.64m (Typ.)@ VGS = 10V, ID = 80A Automotive Engine Control Qg(tot) = 345nC (Typ.)@ VGS = 10V Powertrain Management Low Miller Charge Motors, Solenoids Low QRR Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse)
8.4. Size:188K fairchild semi
fdp8447l.pdf 

May 2007 FDP8447L tm N-Channel PowerTrench MOSFET 40V, 50A, 8.7m Features General Description Max rDS(on) = 8.7m at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to deliver Max rDS(on) = 11.2m at VGS = 4.5V, ID = 11A low rDS(on) and optimized BVDSS capability to offer superior Fast Swi
8.5. Size:449K fairchild semi
fdp8443 f085.pdf 

March 2009 FDP8443_F085 N-Channel PowerTrench MOSFET 40V, 80A, 3.5m Applications Features Typ rDS(on) = 2.7m at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 142nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / A
8.6. Size:381K fairchild semi
fdp8441.pdf 

September 2006 tm FDP8441 N-Channel PowerTrench MOSFET 40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta
8.7. Size:664K onsemi
fdp8440.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.8. Size:300K onsemi
fdp8447l.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.9. Size:872K cn vbsemi
fdp8447l.pdf 

FDP8447L www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0055 at VGS = 10 V 100 COMPLIANT 40 130 nC 0.0070 at VGS = 4.5 V 90 APPLICATIONS Synchronous Rectification TO-220AB Power Supplies D G S G D S Top View N-Channel MOSFET ABSOLUTE
8.10. Size:284K inchange semiconductor
fdp8441 .pdf 

isc N-Channel MOSFET Transistor FDP8441 FEATURES With TO-220 packaging Drain Source Voltage- V 40V DSS Static drain-source on-resistance RDS(on) 3.1m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
8.11. Size:283K inchange semiconductor
fdp8443.pdf 

isc N-Channel MOSFET Transistor FDP8443 FEATURES With TO-220 packaging Drain Source Voltage- V 40V DSS Static drain-source on-resistance RDS(on) 3.5m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
8.12. Size:283K inchange semiconductor
fdp8447l.pdf 

isc N-Channel MOSFET Transistor FDP8447L FEATURES With TO-220 packaging Drain Source Voltage- V 40V DSS Static drain-source on-resistance RDS(on) 8.7m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25
8.13. Size:283K inchange semiconductor
fdp8441.pdf 

isc N-Channel MOSFET Transistor FDP8441 FEATURES With TO-220 packaging Drain Source Voltage- V 40V DSS Static drain-source on-resistance RDS(on) 2.7m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
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