Справочник MOSFET. FDP8442F085

 

FDP8442F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDP8442F085
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 254 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 181 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FDP8442F085

 

 

FDP8442F085 Datasheet (PDF)

 7.1. Size:400K  fairchild semi
fdp8442 f085.pdf

FDP8442F085 FDP8442F085

May 2010FDP8442_F085N-Channel PowerTrench MOSFET40V, 80A, 3.1m Features Applications Automotive Engine Control Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repet

 7.2. Size:291K  fairchild semi
fdp8442.pdf

FDP8442F085 FDP8442F085

June 2007FDP8442N-Channel PowerTrench MOSFET40V, 80A, 3.1m Features Applications Automotive Engine Control Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repetitiv

 8.1. Size:303K  fairchild semi
fdp8441 f085.pdf

FDP8442F085 FDP8442F085

September 2006tmFDP8441N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta

 8.2. Size:297K  fairchild semi
fdp8443.pdf

FDP8442F085 FDP8442F085

August 2007FDP8443tmN-Channel PowerTrench MOSFET 40V, 80A, 3.5m ApplicationsFeatures Typ rDS(on) = 2.7m at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 142nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / A

 8.3. Size:767K  fairchild semi
fdp8440.pdf

FDP8442F085 FDP8442F085

January 2009FDP8440 tmN-Channel PowerTrench MOSFET40V, 277A, 2.2mFeatures Application RDS(on) = 1.64m (Typ.)@ VGS = 10V, ID = 80A Automotive Engine Control Qg(tot) = 345nC (Typ.)@ VGS = 10V Powertrain Management Low Miller Charge Motors, Solenoids Low QRR Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse)

 8.4. Size:188K  fairchild semi
fdp8447l.pdf

FDP8442F085 FDP8442F085

May 2007FDP8447LtmN-Channel PowerTrench MOSFET 40V, 50A, 8.7mFeatures General Description Max rDS(on) = 8.7m at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to deliver Max rDS(on) = 11.2m at VGS = 4.5V, ID = 11Alow rDS(on) and optimized BVDSS capability to offer superior Fast Swi

 8.5. Size:449K  fairchild semi
fdp8443 f085.pdf

FDP8442F085 FDP8442F085

March 2009FDP8443_F085N-Channel PowerTrench MOSFET 40V, 80A, 3.5m ApplicationsFeatures Typ rDS(on) = 2.7m at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 142nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / A

 8.6. Size:381K  fairchild semi
fdp8441.pdf

FDP8442F085 FDP8442F085

September 2006tmFDP8441N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Sta

 8.7. Size:664K  onsemi
fdp8440.pdf

FDP8442F085 FDP8442F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.8. Size:300K  onsemi
fdp8447l.pdf

FDP8442F085 FDP8442F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.9. Size:872K  cn vbsemi
fdp8447l.pdf

FDP8442F085 FDP8442F085

FDP8447Lwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0055 at VGS = 10 V 100COMPLIANT 40 130 nC0.0070 at VGS = 4.5 V 90APPLICATIONS Synchronous RectificationTO-220AB Power SuppliesDGSG D STop ViewN-Channel MOSFETABSOLUTE

 8.10. Size:284K  inchange semiconductor
fdp8441 .pdf

FDP8442F085 FDP8442F085

isc N-Channel MOSFET Transistor FDP8441FEATURESWith TO-220 packagingDrain Source Voltage-: V 40VDSSStatic drain-source on-resistance:RDS(on) 3.1m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.11. Size:283K  inchange semiconductor
fdp8443.pdf

FDP8442F085 FDP8442F085

isc N-Channel MOSFET Transistor FDP8443FEATURESWith TO-220 packagingDrain Source Voltage-: V 40VDSSStatic drain-source on-resistance:RDS(on) 3.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.12. Size:283K  inchange semiconductor
fdp8447l.pdf

FDP8442F085 FDP8442F085

isc N-Channel MOSFET Transistor FDP8447LFEATURESWith TO-220 packagingDrain Source Voltage-: V 40VDSSStatic drain-source on-resistance:RDS(on) 8.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.13. Size:283K  inchange semiconductor
fdp8441.pdf

FDP8442F085 FDP8442F085

isc N-Channel MOSFET Transistor FDP8441FEATURESWith TO-220 packagingDrain Source Voltage-: V 40VDSSStatic drain-source on-resistance:RDS(on) 2.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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