Справочник MOSFET. AOB160A60L

 

AOB160A60L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOB160A60L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.6 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 46 nC
   trⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 62 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: TO263

 Аналог (замена) для AOB160A60L

 

 

AOB160A60L Datasheet (PDF)

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 aob160a60l.pdf

AOB160A60L AOB160A60L

AOTF160A60L/AOT160A60L/AOB160A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

 8.1. Size:415K  aosemi
 aob1608l.pdf

AOB160A60L AOB160A60L

AOT1608L/AOB1608L60V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS60VThe AOT1608L/AOB1608L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 140Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 8.2. Size:404K  aosemi
 aob1606l.pdf

AOB160A60L AOB160A60L

AOT1606L/AOB1606L60V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS60VThe AOT1606L/AOB1606L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 178Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 8.3. Size:253K  inchange semiconductor
 aob1608l.pdf

AOB160A60L AOB160A60L

isc N-Channel MOSFET Transistor AOB1608LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 8.4. Size:253K  inchange semiconductor
 aob1606l.pdf

AOB160A60L AOB160A60L

isc N-Channel MOSFET Transistor AOB1606LFEATURESDrain Current I = 178A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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