Справочник MOSFET. FXN0405C

 

FXN0405C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN0405C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 176 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 58 ns
   Cossⓘ - Выходная емкость: 430 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FXN0405C

   - подбор ⓘ MOSFET транзистора по параметрам

 

FXN0405C Datasheet (PDF)

 ..1. Size:918K  cn fx-semi
fxn0405c.pdfpdf_icon

FXN0405C

FuXin Semiconductor Co., Ltd. FXN0405C Series Rev.A General Description Features The FXN0405C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 206A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.1. Size:289K  cn fx-semi
fxn0404c.pdfpdf_icon

FXN0405C

FuXin Semiconductor Co., Ltd. FXN0404C Series Rev.A General Description Features The FXN0404C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 120A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.2. Size:274K  cn fx-semi
fxn0406c.pdfpdf_icon

FXN0405C

FuXin Semiconductor Co., Ltd. FXN0406C Series Rev.A Features General Description VDS = 60V ID = 180A @VGS = 10V The FXN0406C uses advanced Silicon s MOSFET Technology, which Very low on-resistance provides high performance in on-state resistance, fast switching RDS(ON)

 8.3. Size:406K  cn fx-semi
fxn0406h.pdfpdf_icon

FXN0405C

FuXin Semiconductor Co., Ltd. FXN0406H Rev.A General Description Features The FXN0406H uses advanced Silicons MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 180A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON)

Другие MOSFET... FXN0703D , FXN0704C , FXN0406H , FXN0503D , FXN0504D , FXN0507C , FXN0305C , FXN0404C , 2N60 , FXN0406C , FXN0205C , FXN0206C , FXN0303D , FXN0304C , FXN9N45F , FXN9N50F , FXN9N90F .

History: UTT25P10 | AFN1912 | BUK952R8-60E

 

 
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