Справочник MOSFET. FDMC8296

 

FDMC8296 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMC8296
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 27 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: MLP3.3X3.3

 Аналог (замена) для FDMC8296

 

 

FDMC8296 Datasheet (PDF)

 ..1. Size:353K  fairchild semi
 fdmc8296.pdf

FDMC8296 FDMC8296

Electrical Characteristics TJ = 25C unless otherwise notedSymbol Parameter Test Conditions Min Typ Max UnitsOff CharacteristicsBVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0V 30 V BVDSS Breakdown Voltage TemperatureID = 250 A, referenced to 25C 17 mV/C TJ CoefficientVDS = 24V, 1IDSS Zero Gate Voltage Drain Current AVGS = 0V, TJ = 125C 250IGSS Gate t

 8.1. Size:479K  fairchild semi
 fdmc8200.pdf

FDMC8296 FDMC8296

June 2009FDMC8200Dual N-Channel PowerTrench MOSFET 30 V, 9.5 m and 20 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 20 m at VGS = 10 V, ID = 6 Ahas been internally connected to enable easy placement and Max rDS(on) = 32 m at VGS = 4.5 V,

 8.2. Size:461K  fairchild semi
 fdmc8200s.pdf

FDMC8296 FDMC8296

March 2011FDMC8200SDual N-Channel PowerTrench MOSFET 30 V, 10 m, 20 m Features General DescriptionThis device includes two specialized N-Channel MOSFETs in a Q1: N-Channeldue power33(3mm X 3mm MLP) package. The switch node has Max rDS(on) = 20 m at VGS = 10 V, ID = 6 Abeen internally connected to enable easy placement and routing of synchronous buck converters. The

 8.3. Size:479K  onsemi
 fdmc8200s.pdf

FDMC8296 FDMC8296

FDMC8200SDual N-Channel PowerTrench MOSFET30 V, 10 m, 20 m General DescriptionThis device includes two specialized N-Channel MOSFETs in a Featuresdue power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing Q1: N-Channelof synchronous buck converters. The control MOSFET (Q1) and Max rDS(on) = 20 m at VGS = 10

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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