FDMC8296 - параметры транзистора MOSFET, его аналоги, datasheet

FDMC8296 Datasheet (PDF)

..1. Size:353K fairchild semi
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Electrical Characteristics TJ = 25C unless otherwise notedSymbol Parameter Test Conditions Min Typ Max UnitsOff CharacteristicsBVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0V 30 V BVDSS Breakdown Voltage TemperatureID = 250 A, referenced to 25C 17 mV/C TJ CoefficientVDS = 24V, 1IDSS Zero Gate Voltage Drain Current AVGS = 0V, TJ = 125C 250IGSS Gate t

8.1. Size:479K fairchild semi
fdmc8200.pdf pdf_icon

June 2009FDMC8200Dual N-Channel PowerTrench MOSFET 30 V, 9.5 m and 20 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 20 m at VGS = 10 V, ID = 6 Ahas been internally connected to enable easy placement and Max rDS(on) = 32 m at VGS = 4.5 V,

8.2. Size:461K fairchild semi
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March 2011FDMC8200SDual N-Channel PowerTrench MOSFET 30 V, 10 m, 20 m Features General DescriptionThis device includes two specialized N-Channel MOSFETs in a Q1: N-Channeldue power33(3mm X 3mm MLP) package. The switch node has Max rDS(on) = 20 m at VGS = 10 V, ID = 6 Abeen internally connected to enable easy placement and routing of synchronous buck converters. The

8.3. Size:479K onsemi
fdmc8200s.pdf pdf_icon

FDMC8200SDual N-Channel PowerTrench MOSFET30 V, 10 m, 20 m General DescriptionThis device includes two specialized N-Channel MOSFETs in a Featuresdue power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing Q1: N-Channelof synchronous buck converters. The control MOSFET (Q1) and Max rDS(on) = 20 m at VGS = 10

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