FXN0205C - Даташиты. Аналоги. Основные параметры
Наименование производителя: FXN0205C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 260 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 85 ns
Cossⓘ - Выходная емкость: 1100 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
Тип корпуса: TO220
Аналог (замена) для FXN0205C
FXN0205C Datasheet (PDF)
fxn0205c.pdf

FuXin Semiconductor Co., Ltd. FXN0205C Series Rev.A General Description Features The FXN0205C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
fxn0204cq.pdf

FuXin Semiconductor Co., Ltd. FXN0204CQ Serise Rev.A General Description Features The FXN0204CQ uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus
fxn0204c.pdf

FuXin Semiconductor Co., Ltd. FXN0204C Series Rev.A General Description Features The FXN0204C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
fxn0206c.pdf

FuXin Semiconductor Co., Ltd. FXN0206C Series Rev.AGeneral Description Features The FXN0206C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 190A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
Другие MOSFET... FXN0406H , FXN0503D , FXN0504D , FXN0507C , FXN0305C , FXN0404C , FXN0405C , FXN0406C , IRFB31N20D , FXN0206C , FXN0303D , FXN0304C , FXN9N45F , FXN9N50F , FXN9N90F , FXN9N90P , FXN15S50F .
History: IXFT94N30P3 | 2SK3678-01 | 2SK3681-01 | H6N70F | AP9T18GH | IRC840PBF | TPCA8A01-H
History: IXFT94N30P3 | 2SK3678-01 | 2SK3681-01 | H6N70F | AP9T18GH | IRC840PBF | TPCA8A01-H



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