Справочник MOSFET. FXN0205C

 

FXN0205C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN0205C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 260 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FXN0205C

   - подбор ⓘ MOSFET транзистора по параметрам

 

FXN0205C Datasheet (PDF)

 ..1. Size:807K  cn fx-semi
fxn0205c.pdfpdf_icon

FXN0205C

FuXin Semiconductor Co., Ltd. FXN0205C Series Rev.A General Description Features The FXN0205C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.1. Size:657K  cn fx-semi
fxn0204cq.pdfpdf_icon

FXN0205C

FuXin Semiconductor Co., Ltd. FXN0204CQ Serise Rev.A General Description Features The FXN0204CQ uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 8.2. Size:1086K  cn fx-semi
fxn0204c.pdfpdf_icon

FXN0205C

FuXin Semiconductor Co., Ltd. FXN0204C Series Rev.A General Description Features The FXN0204C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.3. Size:781K  cn fx-semi
fxn0206c.pdfpdf_icon

FXN0205C

FuXin Semiconductor Co., Ltd. FXN0206C Series Rev.AGeneral Description Features The FXN0206C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 190A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

Другие MOSFET... FXN0406H , FXN0503D , FXN0504D , FXN0507C , FXN0305C , FXN0404C , FXN0405C , FXN0406C , IRFB31N20D , FXN0206C , FXN0303D , FXN0304C , FXN9N45F , FXN9N50F , FXN9N90F , FXN9N90P , FXN15S50F .

History: SWP072R72E7T

 

 
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