FXN0205C. Аналоги и основные параметры

Наименование производителя: FXN0205C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 260 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 85 ns

Cossⓘ - Выходная емкость: 1100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm

Тип корпуса: TO220

Аналог (замена) для FXN0205C

- подборⓘ MOSFET транзистора по параметрам

 

FXN0205C даташит

 ..1. Size:807K  cn fx-semi
 fxn0205c.pdf pdf_icon

FXN0205C

FuXin Semiconductor Co., Ltd. FXN0205C Series Rev.A General Description Features The FXN0205C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.1. Size:657K  cn fx-semi
 fxn0204cq.pdf pdf_icon

FXN0205C

FuXin Semiconductor Co., Ltd. FXN0204CQ Serise Rev.A General Description Features The FXN0204CQ uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 8.2. Size:1086K  cn fx-semi
 fxn0204c.pdf pdf_icon

FXN0205C

FuXin Semiconductor Co., Ltd. FXN0204C Series Rev.A General Description Features The FXN0204C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.3. Size:781K  cn fx-semi
 fxn0206c.pdf pdf_icon

FXN0205C

FuXin Semiconductor Co., Ltd. FXN0206C Series Rev.A General Description Features The FXN0206C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 190A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FXN0406H, FXN0503D, FXN0504D, FXN0507C, FXN0305C, FXN0404C, FXN0405C, FXN0406C, IRF2807, FXN0206C, FXN0303D, FXN0304C, FXN9N45F, FXN9N50F, FXN9N90F, FXN9N90P, FXN15S50F