FXN9N45F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN9N45F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

FXN9N45F Datasheet (PDF)

 ..1. Size:736K  cn fx-semi
fxn9n45f.pdfpdf_icon

FXN9N45F

FuXin Semiconductor Co., Ltd. FXN9N45F Series Rev.A General Description Features The FXN9N45F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 8.1. Size:796K  cn fx-semi
fxn9n40c.pdfpdf_icon

FXN9N45F

FuXin Semiconductor Co., Ltd. FXN9N40C Series Rev.AGeneral Description Features The FXN9N40C uses advanced Silicon s MOSFET Technology, which VDS = 400V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.1. Size:797K  cn fx-semi
fxn9n90p.pdfpdf_icon

FXN9N45F

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DSprovides high performance in on-state resistance, fast switching ID = 9A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.2. Size:464K  cn fx-semi
fxn9n50f.pdfpdf_icon

FXN9N45F

FuXin Semiconductor Co., Ltd.FXN9N50F Series Rev.AGeneral Description FeaturesThe FXN9N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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