FXN9N45F datasheet, аналоги, основные параметры

Наименование производителя: FXN9N45F  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 450 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.3 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 95 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO220F

  📄📄 Копировать 

Аналог (замена) для FXN9N45F

- подборⓘ MOSFET транзистора по параметрам

 

FXN9N45F даташит

 ..1. Size:736K  cn fx-semi
 fxn9n45f.pdf pdf_icon

FXN9N45F

FuXin Semiconductor Co., Ltd. FXN9N45F Series Rev.A General Description Features The FXN9N45F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 8.1. Size:796K  cn fx-semi
 fxn9n40c.pdf pdf_icon

FXN9N45F

FuXin Semiconductor Co., Ltd. FXN9N40C Series Rev.A General Description Features The FXN9N40C uses advanced Silicon s MOSFET Technology, which VDS = 400V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.1. Size:797K  cn fx-semi
 fxn9n90p.pdf pdf_icon

FXN9N45F

FuXin Semiconductor Co., Ltd. FXN9N90P Series Rev.A General Description Features The FXN9N90P uses advanced Silicon s MOSFET Technology, which V = 900V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.2. Size:464K  cn fx-semi
 fxn9n50f.pdf pdf_icon

FXN9N45F

FuXin Semiconductor Co., Ltd. FXN9N50F Series Rev.A General Description Features The FXN9N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FXN0305C, FXN0404C, FXN0405C, FXN0406C, FXN0205C, FXN0206C, FXN0303D, FXN0304C, SKD502T, FXN9N50F, FXN9N90F, FXN9N90P, FXN15S50F, FXN18N20C, FXN18N50F, FXN20N50F, FXN0704F