FXN4609F datasheet, аналоги, основные параметры

Наименование производителя: FXN4609F  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 460 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.3 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 95 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO220F

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Аналог (замена) для FXN4609F

- подборⓘ MOSFET транзистора по параметрам

 

FXN4609F даташит

 ..1. Size:600K  cn fx-semi
 fxn4609f.pdf pdf_icon

FXN4609F

FuXin Semiconductor Co., Ltd. FXN4609F Series Rev.A General Description Features The FXN4609F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 8.1. Size:1233K  cn fx-semi
 fxn4607f.pdf pdf_icon

FXN4609F

FuXin Semiconductor Co., Ltd. FXN4607F Series Rev.A General Description Features The FXN4607F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 7A @V =10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.1. Size:1122K  cn fx-semi
 fxn4615f.pdf pdf_icon

FXN4609F

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in

 9.2. Size:1500K  cn fx-semi
 fxn4613f.pdf pdf_icon

FXN4609F

FuXin Semiconductor Co., Ltd. FXN4613F Series Rev.A General Description Features The FXN4613F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 13A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in i

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