Справочник MOSFET. FXN30S55C

 

FXN30S55C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN30S55C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 260 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 46 nC
   tr ⓘ - Время нарастания: 74 ns
   Cossⓘ - Выходная емкость: 72 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FXN30S55C

   - подбор ⓘ MOSFET транзистора по параметрам

 

FXN30S55C Datasheet (PDF)

 ..1. Size:787K  cn fx-semi
 fxn30s55c.pdf pdf_icon

FXN30S55C

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.AGeneral Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 6.1. Size:864K  cn fx-semi
 fxn30s55f.pdf pdf_icon

FXN30S55C

FuXin Semiconductor Co., Ltd. FXN3 0S55F Series Rev.AGeneral Description Features The FXN30S55F uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in ind

 8.1. Size:901K  cn fx-semi
 fxn30s60t.pdf pdf_icon

FXN30S55C

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.AGeneral Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu

 8.2. Size:563K  cn fx-semi
 fxn30s60f.pdf pdf_icon

FXN30S55C

FuXin Semiconductor Co., Ltd. FXN30S60F Series ReV.AGeneral Description Features The FXN30S60F uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu

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