FXN30S55C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FXN30S55C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 260 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 46 nC
trⓘ - Время нарастания: 74 ns
Cossⓘ - Выходная емкость: 72 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: TO220
- подбор MOSFET транзистора по параметрам
FXN30S55C Datasheet (PDF)
fxn30s55c.pdf
FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.AGeneral Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
fxn30s55f.pdf
FuXin Semiconductor Co., Ltd. FXN3 0S55F Series Rev.AGeneral Description Features The FXN30S55F uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in ind
fxn30s60t.pdf
FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.AGeneral Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu
fxn30s60f.pdf
FuXin Semiconductor Co., Ltd. FXN30S60F Series ReV.AGeneral Description Features The FXN30S60F uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
