Справочник MOSFET. FXN0204C

 

FXN0204C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN0204C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 260 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 129 nC
   tr ⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FXN0204C

   - подбор ⓘ MOSFET транзистора по параметрам

 

FXN0204C Datasheet (PDF)

 ..1. Size:1086K  cn fx-semi
fxn0204c.pdfpdf_icon

FXN0204C

FuXin Semiconductor Co., Ltd. FXN0204C Series Rev.A General Description Features The FXN0204C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 0.1. Size:657K  cn fx-semi
fxn0204cq.pdfpdf_icon

FXN0204C

FuXin Semiconductor Co., Ltd. FXN0204CQ Serise Rev.A General Description Features The FXN0204CQ uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 8.1. Size:807K  cn fx-semi
fxn0205c.pdfpdf_icon

FXN0204C

FuXin Semiconductor Co., Ltd. FXN0205C Series Rev.A General Description Features The FXN0205C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.2. Size:781K  cn fx-semi
fxn0206c.pdfpdf_icon

FXN0204C

FuXin Semiconductor Co., Ltd. FXN0206C Series Rev.AGeneral Description Features The FXN0206C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 190A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 6N40 | AP02N90I-HF

 

 
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