DH012N03E - аналоги, параметры транзистора - Справочник транзисторов

DH012N03E даташит

..1. Size:1133K cn wxdh
dh012n03 dh012n03f dh012n03i dh012n03e dh012n03b dh012n03d.pdf pdf_icon

DH012N03/DH012N03F/DH012N03I/ DH012N03E/DH012N03B/DH012N03D 320A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 1.5m DS(on) (TYP) standard. 1 3 S I = 320A D 2 Features Low on res

6.1. Size:790K cn wxdh
dh012n03p.pdf pdf_icon

DH012N03P 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used V = 30V DSS 2 D advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 1.2m DS(on) (TYP) G standard. I Silicon limit = 256A D 1 3 S I Package limit =100A D 2 Features Low on resist

6.2. Size:888K cn wxdh
dh012n03u.pdf pdf_icon

DH012N03U 235A 30V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V =30V DSS Rdson and low gate charge. Which accords with the RoHS G R =1.15m DS(on) (TYP) standard. 1 3 S I =235A D 2 Features Low on resistance Low gate charge Fast switching

Другие MOSFET... 60N10F , 60N10I , AOB413 , B110N04 , HYG035N10NS2P , HYG035N10NS2B , JMTE070N07A , DH012N03D , IRFZ48N , DH012N03F , DH012N03I , DH012N03P , DH012N03U , DH019N04F , DH019N04I , DH020N03 , DH020N03B .