DH012N03U - аналоги, параметры транзистора - Справочник транзисторов

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DH012N03U 235A 30V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V =30V DSS Rdson and low gate charge. Which accords with the RoHS G R =1.15m DS(on) (TYP) standard. 1 3 S I =235A D 2 Features Low on resistance Low gate charge Fast switching

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DH012N03P 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used V = 30V DSS 2 D advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 1.2m DS(on) (TYP) G standard. I Silicon limit = 256A D 1 3 S I Package limit =100A D 2 Features Low on resist

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DH012N03/DH012N03F/DH012N03I/ DH012N03E/DH012N03B/DH012N03D 320A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 1.5m DS(on) (TYP) standard. 1 3 S I = 320A D 2 Features Low on res

Другие MOSFET... HYG035N10NS2P , HYG035N10NS2B , JMTE070N07A , DH012N03D , DH012N03E , DH012N03F , DH012N03I , DH012N03P , IRF9640 , DH019N04F , DH019N04I , DH020N03 , DH020N03B , DH020N03D , DH020N03E , B25N10 , B2N65 .