B25N10
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: B25N10
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 88
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 30
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 61
nC
trⓘ -
Время нарастания: 26
ns
Cossⓘ - Выходная емкость: 107
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.036
Ohm
Тип корпуса:
TO251
- подбор MOSFET транзистора по параметрам
B25N10
Datasheet (PDF)
..1. Size:1238K cn wxdh
25n10 f25n10 i25n10 e25n10 b25n10 d25n10.pdf 

25N10/F25N10/I25N10/E25N10/B25N10/D25N1025A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs UsedV = 100VDSSadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theR = 30mDS(on) TYP)RoHS standard.I = 25AD2 Features Fast Switching Low ON Resistance(Rdson36m)
9.1. Size:186K onsemi
ngtb25n120fl.pdf 

NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di
9.2. Size:148K onsemi
ngtb25n120fl2.pdf 

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa
9.3. Size:177K onsemi
ngtb25n120lwg.pdf 

NGTB25N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device
9.4. Size:177K onsemi
ngtb25n120l.pdf 

NGTB25N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device
9.5. Size:84K onsemi
ngtb25n120swg.pdf 

NGTB25N120SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com
9.6. Size:86K onsemi
ngtb25n120s.pdf 

NGTB25N120SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fasthttp://onsemi.co
9.7. Size:144K onsemi
ngtb25n120fl2wg.pdf 

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa
9.8. Size:174K onsemi
ngtb25n120ihl.pdf 

NGTB25N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic
9.9. Size:154K onsemi
ngtb25n120fl3wg.pdf 

NGTB25N120FL3WGIGBT - Ultra Field StopThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft
9.10. Size:186K onsemi
ngtb25n120flwg.pdf 

NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di
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