B25N10 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: B25N10
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 88 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 107 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
Тип корпуса: TO251
Аналог (замена) для B25N10
B25N10 Datasheet (PDF)
25n10 f25n10 i25n10 e25n10 b25n10 d25n10.pdf

25N10/F25N10/I25N10/E25N10/B25N10/D25N1025A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs UsedV = 100VDSSadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theR = 30mDS(on) TYP)RoHS standard.I = 25AD2 Features Fast Switching Low ON Resistance(Rdson36m)
ngtb25n120fl.pdf

NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di
ngtb25n120fl2.pdf

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa
ngtb25n120lwg.pdf

NGTB25N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device
Другие MOSFET... DH012N03P , DH012N03U , DH019N04F , DH019N04I , DH020N03 , DH020N03B , DH020N03D , DH020N03E , HY1906P , B2N65 , B4N60 , B4N65 , B4N80 , B50N06 , B5N50 , B5N65 , B630 .
History: SI3406 | BRI630 | FDMB2307NZ | APT50M65B2LL | SWD062R08E8T | STT3463P | IPP80P04P4L-04
History: SI3406 | BRI630 | FDMB2307NZ | APT50M65B2LL | SWD062R08E8T | STT3463P | IPP80P04P4L-04



Список транзисторов
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