DH50N06FZC - описание и поиск аналогов

 ..1. Size:1704K  cn wxdh
 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf 

 9.1. Size:540K  fairchild semi
 fdh50n50 f133 fda50n50.pdf 

October 2008 TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es

 9.2. Size:545K  fairchild semi
 fdh50n50 f133.pdf 

February 2012 TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been e

 9.3. Size:1195K  fairchild semi
 fdh50n50.pdf 

May 2014 FDH50N50 / FDA50N50 N-Channel UniFETTM MOSFET 500 V, 48 A, 105 m Features Description RDS(on) = 89 m (Typ.) @ VGS = 10 V, ID = 24 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 105 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 45

 9.4. Size:223K  onsemi
 fdh50n50 fda50n50.pdf 

TM UniFET FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored t

 9.5. Size:1399K  cn wxdh
 dh50n15 dhf50n15 dhi50n15 dhe50n15.pdf 

DH50N15/DHF50N15/ DHI50N15/DHE50N15 50A 150V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets. used 2 D V = 150V DSS advanced trench process technology design, provided excellent Rdson and low gate charge. Which accords with the R = 18m DS(on) (Type) G RoHS standard. 1 I = 50A 3 S D 2 Features Low on resistance Low

 9.6. Size:238K  inchange semiconductor
 fdh50n50.pdf 

isc N-Channel MOSFET Transistor FDH50N50 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate