DH300P06 - параметры транзистора MOSFET, его аналоги, datasheet

DH300P06 Datasheet (PDF)

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DH300P06/DH300P06F/DH300P06IDH300P06E/DH300P06B/DH300P06D30A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =28mDS(on) (TYP)RoHS standard.I = -30AD2 Features Fast switching Low on resist

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DH300P06L-50A -60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV = -60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 22mDS(on) (TYP)standard.I = -50AD2 Features Low on resistance Low gate charge Fast switching Low reverse

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DH300N08/DH300N08F/DH300N08I/DH300N08E/DH300N08B/DH300N08D19A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 30mDS(on) (TYP)standard.13 SI = 19AD2 Features Low on resista

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