DCCF040M65G2 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DCCF040M65G2
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 176 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 22 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 52 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 135 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
Тип корпуса: TO247-4
- подбор MOSFET транзистора по параметрам
DCCF040M65G2 Datasheet (PDF)
dcc040m65g2 dccf040m65g2.pdf

DCC040M65G2/DCCF040M65G2 52A 650V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency
dcc060m65g2 dccf060m65g2.pdf

DCC060M65G2/DCCF060M65G2 41A 650V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency
dccf016m120g3.pdf

DCCF016M120G31200V/16m/110A SiC MOSFETFeatures Key ParametersVDS Higher System Efficiency 1200VRDS(on)typ Reduced Cooling Requirements 16mID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching FrequencyApplications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mod
dcc016m120g2 dccf016m120g2.pdf

DCC016M120G2/DCCF016M120G2 120A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequ
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRF241 | NCE70T180D
History: IRF241 | NCE70T180D



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
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