DCCF080M120A2. Аналоги и основные параметры
Наименование производителя: DCCF080M120A2
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 192 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 36 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9.5 ns
Cossⓘ - Выходная емкость: 85 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.098 Ohm
Тип корпуса: TO247-4
Аналог (замена) для DCCF080M120A2
- подборⓘ MOSFET транзистора по параметрам
DCCF080M120A2 даташит
dcc080m120a dccf080m120a2.pdf
DCC080M120A/ DCCF080M120A2 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freque
dcc060m65g2 dccf060m65g2.pdf
DCC060M65G2/DCCF060M65G2 41A 650V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency
dccf016m120g3.pdf
DCCF016M120G3 1200V/16m /110A SiC MOSFET Features Key Parameters VDS Higher System Efficiency 1200V RDS(on)typ Reduced Cooling Requirements 16m ID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching Frequency Applications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mod
dcc016m120g2 dccf016m120g2.pdf
DCC016M120G2/DCCF016M120G2 120A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequ
Другие MOSFET... DH100P25 , DH100P25B , DH100P25D , DH100P25E , DH100P25F , DH100P25I , DCCF040M65G2 , DCCF060M65G2 , K3569 , DCCF160M120G1 , DH025N03 , DH025N03B , DH025N03D , DH025N03E , DH025N03F , DH025N03I , DH025N04 .
🌐 : EN ES РУ
Список транзисторов
Обновления
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