DH100P30CD Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DH100P30CD
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 168 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 47 ns
Cossⓘ - Выходная емкость: 176 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
Тип корпуса: TO252
Аналог (замена) для DH100P30CD
DH100P30CD Datasheet (PDF)
dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf

DH100P30C/DH100P30CF/DH100P30CIDH100P30CE/DH100P30CB/DH100P30CD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 40mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r
dh100p30.pdf

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON
dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf

DH100P30A/DH100P30AF/DH100P30AIDH100P30AE/DH100P30AB/DH100P30AD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r
dh100p30d.pdf

DH100P30D -100V/33m/-35A P-MOSFET Features Key ParametersVDS Low on resistance -100VRDS(on)typ. Low reverse transfer capacitances 33mID 100% single pulse avalanche energy test -35ACiss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nCApplications Load switch TO-252Marking & Packing InformationPart # Package
Другие MOSFET... DH100P30A , DH100P30AB , DH100P30AD , DH100P30AE , DH100P30AF , DH100P30AI , DH100P30C , DH100P30CB , IRF3205 , DH100P30CE , DH030N03P , DH033N03 , DH033N03B , DH033N03D , DH033N03E , DH033N03F , DH033N03I .
History: 2SK3367 | HAT2142H | PMN25ENEA | BRCS3134ZK | TSP65R190S2 | AO6808 | TSM7N65CZ
History: 2SK3367 | HAT2142H | PMN25ENEA | BRCS3134ZK | TSP65R190S2 | AO6808 | TSM7N65CZ



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sc897 datasheet | 2sd389 | mp41 transistor | nkt275 datasheet | 2sd947 | a763 transistor | fhp40n20 | 2n3035 transistor