DH033N03 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DH033N03
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 113 ns
Cossⓘ - Выходная емкость: 315 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO220
Аналог (замена) для DH033N03
DH033N03 Datasheet (PDF)
dh033n03 dh033n03f dh033n03i dh033n03e dh033n03b dh033n03d.pdf

DH033N03/DH033N03F/DH033N03I/DH033N03E/DH033N03B/DH033N03D100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced mode power vdmosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =3.3mDS(on) (TYP)Gstandard.1I = 100AD3 S2 Features Low switchin
dh033n03r.pdf

DH033N03R65A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced mode power vdmosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =3.4mDS(on) (TYP)Gstandard.1I = 65A3 S D2 Features= Low switching loss= Low on resistance= Low gate c
dh033n04p.pdf

DH033N04P96A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.5mDS(on) (TYP)standard.13 SI = 96AD2 Features Low on resistance Low gate charge Fast switching
dh033n04 dh033n04f dh033n04i dh033n04e dh033n04b dh033n04d.pdf

DH033N04/DH033N04F/DH033N04I/DH033N04E/DH033N04B/DH033N04D120A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.5mDS(on) (TYP)standard.13 SI = 120AD2 Features Low on res
Другие MOSFET... DH100P30AE , DH100P30AF , DH100P30AI , DH100P30C , DH100P30CB , DH100P30CD , DH100P30CE , DH030N03P , 20N60 , DH033N03B , DH033N03D , DH033N03E , DH033N03F , DH033N03I , DH033N03R , DH033N04 , DH033N04B .
History: STF4N80K5 | SPE65R360G | ET6310
History: STF4N80K5 | SPE65R360G | ET6310



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
nkt275 datasheet | 2sd947 | a763 transistor | fhp40n20 | 2n3035 transistor | 2sb649a | 2sd188 | k b778 transistor