DH033N03I. Аналоги и основные параметры

Наименование производителя: DH033N03I

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 110 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

|VGSth|ⓘ - Пороговое напряжение включения: 2 V

Qg ⓘ - Общий заряд затвора: 50 nC

tr ⓘ - Время нарастания: 113 ns

Cossⓘ - Выходная емкость: 315 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm

Тип корпуса: TO262

Аналог (замена) для DH033N03I

- подборⓘ MOSFET транзистора по параметрам

 

DH033N03I даташит

 ..1. Size:1299K  cn wxdh
 dh033n03 dh033n03f dh033n03i dh033n03e dh033n03b dh033n03d.pdf pdf_icon

DH033N03I

DH033N03/DH033N03F/DH033N03I/ DH033N03E/DH033N03B/DH033N03D 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced mode power vdmosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R =3.3m DS(on) (TYP) G standard. 1 I = 100A D 3 S 2 Features Low switchin

 6.1. Size:696K  cn wxdh
 dh033n03r.pdf pdf_icon

DH033N03I

DH033N03R 65A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced mode power vdmosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R =3.4m DS(on) (TYP) G standard. 1 I = 65A 3 S D 2 Features = Low switching loss = Low on resistance = Low gate c

 7.1. Size:737K  cn wxdh
 dh033n04p.pdf pdf_icon

DH033N03I

DH033N04P 96A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.5m DS(on) (TYP) standard. 1 3 S I = 96A D 2 Features Low on resistance Low gate charge Fast switching

 7.2. Size:1190K  cn wxdh
 dh033n04 dh033n04f dh033n04i dh033n04e dh033n04b dh033n04d.pdf pdf_icon

DH033N03I

DH033N04/DH033N04F/DH033N04I/ DH033N04E/DH033N04B/DH033N04D 120A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.5m DS(on) (TYP) standard. 1 3 S I = 120A D 2 Features Low on res

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... DH100P30CD, DH100P30CE, DH030N03P, DH033N03, DH033N03B, DH033N03D, DH033N03E, DH033N03F, IRFZ44, DH033N03R, DH033N04, DH033N04B, DH033N04D, DH033N04E, DH033N04F, DH033N04I, DH033N04P