DH033N04E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DH033N04E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 133 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 117 ns
Cossⓘ - Выходная емкость: 406 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO263
- подбор MOSFET транзистора по параметрам
DH033N04E Datasheet (PDF)
dh033n04 dh033n04f dh033n04i dh033n04e dh033n04b dh033n04d.pdf

DH033N04/DH033N04F/DH033N04I/DH033N04E/DH033N04B/DH033N04D120A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.5mDS(on) (TYP)standard.13 SI = 120AD2 Features Low on res
dh033n04p.pdf

DH033N04P96A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.5mDS(on) (TYP)standard.13 SI = 96AD2 Features Low on resistance Low gate charge Fast switching
dh033n03 dh033n03f dh033n03i dh033n03e dh033n03b dh033n03d.pdf

DH033N03/DH033N03F/DH033N03I/DH033N03E/DH033N03B/DH033N03D100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced mode power vdmosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =3.3mDS(on) (TYP)Gstandard.1I = 100AD3 S2 Features Low switchin
dh033n03r.pdf

DH033N03R65A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced mode power vdmosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =3.4mDS(on) (TYP)Gstandard.1I = 65A3 S D2 Features= Low switching loss= Low on resistance= Low gate c
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: RU20N65P
History: RU20N65P



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