Справочник MOSFET. DH045N04P

 

DH045N04P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DH045N04P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 113 ns
   Cossⓘ - Выходная емкость: 232 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для DH045N04P

   - подбор ⓘ MOSFET транзистора по параметрам

 

DH045N04P Datasheet (PDF)

 ..1. Size:774K  cn wxdh
 dh045n04p.pdf pdf_icon

DH045N04P

DH045N04P80A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.7mDS(on) (TYP)standard.13 SI = 80AD2 Features Low on resistance Low gate charge Fast switching

 6.1. Size:1215K  cn wxdh
 dh045n04 dh045n04f dh045n04i dh045n04e dh045n04b dh045n04d.pdf pdf_icon

DH045N04P

DH045N04/DH045N04FDH045N04I/DH045N04E/DH045N04B/DH045N04D90A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.5mDS(on) (TYP)standard.13 SI = 90AD2 Features Low on resist

 7.1. Size:1385K  cn wxdh
 dh045n06 dh045n06f dh045n06i dh045n06e dh045n06b dh045n06d.pdf pdf_icon

DH045N04P

DH045N06/DH045N06F/DH045N06IDH045N06E/DH045N06B/DH045N06D145A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 4.5mDS(on) (TYP)standard.13 SI = 145AD2 Features Low on resi

Другие MOSFET... DH116N08I , ZM019N03N , DH045N04 , DH045N04B , DH045N04D , DH045N04E , DH045N04F , DH045N04I , TK10A60D , DH045N06 , DH045N06B , DH045N06D , DH045N06E , DH045N06F , DH045N06I , DH060N03R , DH060N07B .

History: DMP3098LQ | PHP110NQ08LT | AP60T10GS-HF | LND150N3 | RJK4018DPK | 9435 | CEU08N6A

 

 
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