DHS021N04
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DHS021N04
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 136
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 180
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 60
nC
trⓘ -
Время нарастания: 95.6
ns
Cossⓘ - Выходная емкость: 1611
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0025
Ohm
Тип корпуса:
TO220
- подбор MOSFET транзистора по параметрам
DHS021N04
Datasheet (PDF)
..1. Size:875K cn wxdh
dhs021n04 dhs021n04e.pdf 
DHS021N04&DHS021N04E180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced splite gate trench technology design, providedR = 2.1mTO-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard.1 R = 1.8mTO-263DS(on) (TYP)3 SI = 180AD2
0.1. Size:872K cn wxdh
dhs021n04b dhs021n04d.pdf 
DHS021N04B&DHS021N04D120A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 40VDSSadvanced splite gate trench technology design, provided 2 Dexcellent Rdson and low gate charge. Which accords withR = 2mDS(on) (TYP)the RoHS standard.G1I Silicon limit = 170AD3 S2 FeaturesI Package limit 12
0.2. Size:794K cn wxdh
dhs021n04p.pdf 
DHS021N04P100A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 40VDSSadvanced splite gate trench technology design, provided 2 Dexcellent Rdson and low gate charge. Which accords withR = 1.4mDS(on) (TYP)the RoHS standard.G1I Silicon limit = 170AD3 S2 FeaturesI Package limit 100A=D
9.1. Size:868K cn wxdh
dhs022n06 dhs022n06e.pdf 
DHS022N06/DHS022N06E180A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60VDSSadvanced Splite gate technology design, provided2 DR = 2.3mTo-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withthe RoHS standard.R = 2.0mTo-263DS(on) (TYP)G1I (Silicon limit) = 200AD
9.2. Size:871K cn wxdh
dhs025n06 dhs025n06e.pdf 
DHS025N06/DHS025N06E180A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV =60VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withR =2.5 mTO-220DS(on) (TYP)Gthe RoHS standard.1R =2.2 mTO-263DS(on) (TYP)3 S2 FeaturesI =
9.3. Size:977K cn wxdh
dhs020n88 dhs020n88e dhs020n88i.pdf 
DHS020N88/DHS020N88E/DHS020N88I180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 85VDSSadvanced splite gate trench technology design, provided2 DR = 1.9mTO-220&TO-262DS(on) (TYP)excellent Rdson and low gate charge. Which accords withthe RoHS standard.R = 1.6mTO-263DS(on) (TYP)G1I
9.4. Size:1358K cn wxdh
dhs025n88 dhs025n88f dhs025n88i dhs025n88e dhs025n88d dhs025n88b.pdf 
DHS025N88/DHS025N88F/DHS025N88IDHS025N88E/DHS025N88D/DHS025N88B205A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 2.5mDS(on) (TYP)the RoHS standard.13 SI = 205AD2 Feature
9.5. Size:1171K cn wxdh
dhs025n10 dhs025n10e dhs025n10d dhs025n10b.pdf 
DHS025N10/DHS025N10EDHS025N10D/DHS025N10B240A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV =100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 2.8mDS(on) (TYP)the RoHS standard.13 SI = 240AD2 Features Low on resistanc
9.6. Size:879K cn wxdh
dhs020n04p.pdf 
DHS020N04P170A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 1.3mDS(on) (TYP)the RoHS standard.13 SI = 170AD2 Features Low on resistance Low gate charge Fast
9.7. Size:906K cn wxdh
dhs025n10u.pdf 
DHS025N10U180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV =100VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 2.2mDS(on) (TYP)time. Which accords with the RoHS standard. 13 SI =180AD2 Features Low on resistance Low gate
9.8. Size:909K cn wxdh
dhs020n88u.pdf 
DHS020N88U285A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 1.4mDS(on) (TYP)the RoHS standard. 13 SI =285AD2 Features Low on resistance Low gate charge Fast switching
9.9. Size:810K cn wxdh
dhs020n04b dhs020n04d.pdf 
DHS020N04B/DHS020N04D180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Low on resistance Lo
9.10. Size:999K cn wxdh
dhs020n04 dhs020n04f dhs020n04i dhs020n04e.pdf 
DHS020N04/DHS020N04F/DHS020N04I/DHS020N04E180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Lo
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