DHS021N04P - описание и поиск аналогов

DHS021N04P 100A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 40V DSS advanced splite gate trench technology design, provided 2 D excellent Rdson and low gate charge. Which accords with R = 1.4m DS(on) (TYP) the RoHS standard. G 1 I Silicon limit = 170A D 3 S 2 Features I Package limit 100A = D

DHS021N04B&DHS021N04D 120A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 40V DSS advanced splite gate trench technology design, provided 2 D excellent Rdson and low gate charge. Which accords with R = 2m DS(on) (TYP) the RoHS standard. G 1 I Silicon limit = 170A D 3 S 2 Features I Package limit 12

DHS021N04&DHS021N04E 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced splite gate trench technology design, provided R = 2.1m TO-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. 1 R = 1.8m TO-263 DS(on) (TYP) 3 S I = 180A D 2

DHS022N06/DHS022N06E 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V DSS advanced Splite gate technology design, provided 2 D R = 2.3m To-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 2.0m To-263 DS(on) (TYP) G 1 I (Silicon limit) = 200A D

DHS025N06/DHS025N06E 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V =60V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with R =2.5 m TO-220 DS(on) (TYP) G the RoHS standard. 1 R =2.2 m TO-263 DS(on) (TYP) 3 S 2 Features I =

DHS025N88/DHS025N88F/DHS025N88I DHS025N88E/DHS025N88D/DHS025N88B 205A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 205A D 2 Feature

DHS025N10/DHS025N10E DHS025N10D/DHS025N10B 240A 100V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V =100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.8m DS(on) (TYP) the RoHS standard. 1 3 S I = 240A D 2 Features Low on resistanc

DHS020N04P 170A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.3m DS(on) (TYP) the RoHS standard. 1 3 S I = 170A D 2 Features Low on resistance Low gate charge Fast

DHS025N10U 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V =100V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 2.2m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I =180A D 2 Features Low on resistance Low gate

DHS020N88U 285A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.4m DS(on) (TYP) the RoHS standard. 1 3 S I =285A D 2 Features Low on resistance Low gate charge Fast switching

DHS020N04B/DHS020N04D 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.7m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Low on resistance Lo

DHS020N04/DHS020N04F/ DHS020N04I/DHS020N04E 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.7m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Lo