DHBSJ11N65 - описание и поиск аналогов

 

DHBSJ11N65 - Аналоги. Основные параметры


   Наименование производителя: DHBSJ11N65
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 25 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для DHBSJ11N65

   - подбор ⓘ MOSFET транзистора по параметрам

 

DHBSJ11N65 технические параметры

 ..1. Size:1552K  cn wxdh
 dhsj11n65 dhfsj11n65 dhisj11n65 dhesj11n65 dhbsj11n65 dhdsj11n65.pdf pdf_icon

DHBSJ11N65

DHSJ11N65/DHFSJ11N65/DHISJ11N65/ DHESJ11N65/DHBSJ11N65/DHDSJ11N65 11A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 D V = 650V DSS Rds(on) with low gate charge. Which accords with the R = 0.33 DS(on) (TYP) RoHS standard. G 1 I = 11A 3 S D 2 Features

 8.1. Size:1649K  cn wxdh
 dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf pdf_icon

DHBSJ11N65

DHSJ13N65/DHFSJ13N65/DHISJ13N65 DHESJ13N65/DHBSJ13N65/DHDSJ13N65 13A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced 2 D V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 0.28 DS(on) (TYP) G RoHS standard. 1 I = 13A 3 S D 2 Features F

 9.1. Size:796K  cn wxdh
 dhdsj7n65 dhbsj7n65.pdf pdf_icon

DHBSJ11N65

DHDSJ7N65/DHBSJ7N65 7A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.56 DS(on) (TYP) G accords with the RoHS standard. 1 I = 7A 3 S D 2 Features Fast switching Low on resistance

 9.2. Size:1116K  cn wxdh
 dhdsj5n65 dhbsj5n65.pdf pdf_icon

DHBSJ11N65

DHDSJ5N65/DHBSJ5N65 4.8A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.87 DS(on) (TYP) G accords with the RoHS standard. 1 I = 4.8A 3 S D 2 Features Fast switching Low on resistance Lo

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DHS021N04E , DHS021N04P , DHS022N06 , DHS022N06E , DHB8290 , DHB90N03B17 , DHB90N045R , DHB9Z24 , AON7403 , DHBSJ13N65 , DHBSJ5N65 , DHBSJ7N65 , DHBZ24B31 , DHD015N06 , DHD035N04 , DHD100N03B13 , DHD16N06 .

 

 
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