Справочник MOSFET. DHBSJ7N65

 

DHBSJ7N65 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DHBSJ7N65
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 63 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 31 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.62 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для DHBSJ7N65

   - подбор ⓘ MOSFET транзистора по параметрам

 

DHBSJ7N65 Datasheet (PDF)

 ..1. Size:796K  cn wxdh
dhdsj7n65 dhbsj7n65.pdfpdf_icon

DHBSJ7N65

DHDSJ7N65/DHBSJ7N65 7A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 DV = 650V DSSadvanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.56 DS(on) (TYP)Gaccords with the RoHS standard. 1I = 7A 3 S D2 Features Fast switching Low on resistance

 9.1. Size:1552K  cn wxdh
dhsj11n65 dhfsj11n65 dhisj11n65 dhesj11n65 dhbsj11n65 dhdsj11n65.pdfpdf_icon

DHBSJ7N65

DHSJ11N65/DHFSJ11N65/DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N6511A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedsuper junction technology and design to provide excellent 2 DV = 650VDSSRds(on) with low gate charge. Which accords with theR = 0.33DS(on) (TYP)RoHS standard. G1I = 11A3 S D2 Features

 9.2. Size:1649K  cn wxdh
dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdfpdf_icon

DHBSJ7N65

DHSJ13N65/DHFSJ13N65/DHISJ13N65DHESJ13N65/DHBSJ13N65/DHDSJ13N6513A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advanced2 DV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with theR = 0.28DS(on) (TYP)GRoHS standard.1I = 13A3 S D2 Features F

 9.3. Size:1116K  cn wxdh
dhdsj5n65 dhbsj5n65.pdfpdf_icon

DHBSJ7N65

DHDSJ5N65/DHBSJ5N654.8A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced VDMOSFETs, is using2 DV = 650VDSSadvanced super junction technology and design toprovide excellent Rdson with low gate charge. WhichR = 0.87DS(on) (TYP)Gaccords with the RoHS standard.1I = 4.8A3 S D2 Features Fast switching Low on resistance Lo

Другие MOSFET... DHS022N06E , DHB8290 , DHB90N03B17 , DHB90N045R , DHB9Z24 , DHBSJ11N65 , DHBSJ13N65 , DHBSJ5N65 , MMD60R360PRH , DHBZ24B31 , DHD015N06 , DHD035N04 , DHD100N03B13 , DHD16N06 , DHD3205A , DHD3N90 , DHD50N03 .

History: STF13N60M2 | SI7491DP | STD4NK50ZD | SIHFD014 | PSMN5R6-100PS | CS7456

 

 
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