DH065N04E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DH065N04E
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 85 ns
Cossⓘ - Выходная емкость: 178 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0072 Ohm
Тип корпуса: TO263
Аналог (замена) для DH065N04E
DH065N04E Datasheet (PDF)
dh065n04 dh065n04f dh065n04i dh065n04e dh065n04b dh065n04d.pdf

DH065N04/DH065N04FDH065N04I/DH065N04E/DH065N04B/DH065N04D80A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.0mDS(on) (TYP)standard.13 SI = 80AD2 Features Low on resist
dh065n04p.pdf

DH065N04P60A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.3mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resistance Low gate charge Fast switching L
dh065n06 dh065n06e.pdf

DH065N06/DH065N06E120A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60VDSS2 Dadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.2mTO-220DS(on) (TYP)standard. G1R = 5mTO-263DS(on) (TYP)3 S2 FeaturesI = 120AD Low
dh065n06d.pdf

DH065N06D110A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60V2 D DSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5mDS(on) (TYP)standard. G1I = 110AD3 S2 Features Low on resistance Low gate charge Fast switching L
Другие MOSFET... DH060N08B , DH060N08D , DH060N08E , DH060N08F , DH060N08I , DH065N04 , DH065N04B , DH065N04D , AON7408 , DH065N04F , DH065N04I , DH065N04P , DH065N06 , DH065N06D , DH065N06E , DHI90N045R , DHI90N055R .
History: STV200N55F3 | CED3172 | SM2F07NSU | SPI15N60CFD | CEU83A3 | 2SK1546
History: STV200N55F3 | CED3172 | SM2F07NSU | SPI15N60CFD | CEU83A3 | 2SK1546



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