DH065N04P - описание и поиск аналогов

 

DH065N04P - Аналоги. Основные параметры


   Наименование производителя: DH065N04P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 178 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для DH065N04P

   - подбор ⓘ MOSFET транзистора по параметрам

 

DH065N04P технические параметры

 ..1. Size:677K  cn wxdh
 dh065n04p.pdf pdf_icon

DH065N04P

DH065N04P 60A 40V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.3m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low gate charge Fast switching L

 6.1. Size:1185K  cn wxdh
 dh065n04 dh065n04f dh065n04i dh065n04e dh065n04b dh065n04d.pdf pdf_icon

DH065N04P

DH065N04/DH065N04FDH065N04I/ DH065N04E/DH065N04B/DH065N04D 80A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.0m DS(on) (TYP) standard. 1 3 S I = 80A D 2 Features Low on resist

 7.1. Size:1036K  cn wxdh
 dh065n06 dh065n06e.pdf pdf_icon

DH065N04P

DH065N06/DH065N06E 120A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V DSS 2 D advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.2m TO-220 DS(on) (TYP) standard. G 1 R = 5m TO-263 DS(on) (TYP) 3 S 2 Features I = 120A D Low

 7.2. Size:855K  cn wxdh
 dh065n06d.pdf pdf_icon

DH065N04P

DH065N06D 110A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V 2 D DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5m DS(on) (TYP) standard. G 1 I = 110A D 3 S 2 Features Low on resistance Low gate charge Fast switching L

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DH060N08F , DH060N08I , DH065N04 , DH065N04B , DH065N04D , DH065N04E , DH065N04F , DH065N04I , AON7408 , DH065N06 , DH065N06D , DH065N06E , DHI90N045R , DHI90N055R , DHI9Z24 , DHISJ11N65 , DHISJ13N65 .

 

 
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