DH065N06E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DH065N06E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 77 nC
trⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 350 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: TO263
DH065N06E Datasheet (PDF)
dh065n06 dh065n06e.pdf

DH065N06/DH065N06E120A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60VDSS2 Dadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.2mTO-220DS(on) (TYP)standard. G1R = 5mTO-263DS(on) (TYP)3 S2 FeaturesI = 120AD Low
dh065n06d.pdf

DH065N06D110A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60V2 D DSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5mDS(on) (TYP)standard. G1I = 110AD3 S2 Features Low on resistance Low gate charge Fast switching L
dh065n04p.pdf

DH065N04P60A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.3mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resistance Low gate charge Fast switching L
dh065n04 dh065n04f dh065n04i dh065n04e dh065n04b dh065n04d.pdf

DH065N04/DH065N04FDH065N04I/DH065N04E/DH065N04B/DH065N04D80A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.0mDS(on) (TYP)standard.13 SI = 80AD2 Features Low on resist
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .



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