Справочник MOSFET. DHDSJ13N65

 

DHDSJ13N65 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DHDSJ13N65
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 28 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.32 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для DHDSJ13N65

   - подбор ⓘ MOSFET транзистора по параметрам

 

DHDSJ13N65 Datasheet (PDF)

 ..1. Size:1649K  cn wxdh
dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdfpdf_icon

DHDSJ13N65

DHSJ13N65/DHFSJ13N65/DHISJ13N65DHESJ13N65/DHBSJ13N65/DHDSJ13N6513A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advanced2 DV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with theR = 0.28DS(on) (TYP)GRoHS standard.1I = 13A3 S D2 Features F

 8.1. Size:1552K  cn wxdh
dhsj11n65 dhfsj11n65 dhisj11n65 dhesj11n65 dhbsj11n65 dhdsj11n65.pdfpdf_icon

DHDSJ13N65

DHSJ11N65/DHFSJ11N65/DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N6511A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedsuper junction technology and design to provide excellent 2 DV = 650VDSSRds(on) with low gate charge. Which accords with theR = 0.33DS(on) (TYP)RoHS standard. G1I = 11A3 S D2 Features

 9.1. Size:796K  cn wxdh
dhdsj7n65 dhbsj7n65.pdfpdf_icon

DHDSJ13N65

DHDSJ7N65/DHBSJ7N65 7A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 DV = 650V DSSadvanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.56 DS(on) (TYP)Gaccords with the RoHS standard. 1I = 7A 3 S D2 Features Fast switching Low on resistance

 9.2. Size:1116K  cn wxdh
dhdsj5n65 dhbsj5n65.pdfpdf_icon

DHDSJ13N65

DHDSJ5N65/DHBSJ5N654.8A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced VDMOSFETs, is using2 DV = 650VDSSadvanced super junction technology and design toprovide excellent Rdson with low gate charge. WhichR = 0.87DS(on) (TYP)Gaccords with the RoHS standard.1I = 4.8A3 S D2 Features Fast switching Low on resistance Lo

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: DHE3205A

 

 
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