E80N06 - Даташиты. Аналоги. Основные параметры

80N06/F80N06/I80N06/ E80N06/B80N06/D80N06 80A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 60V Used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with R = 7m DS(on) (Type) G the RoHS standard. 1 ID = 80A 3 S 2 Features Fast Switching High avalanche C

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD8 General Description Symbol The SRE80N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD8 package is TO-247. Features Figure 1 Symbol o

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU General Description Symbol The SRE80N065FSU is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. G The SRE80N065FSU package is TO-247. Features E High Breakdown Voltage to 650V Figure 1 Symbol of SRE80N065F

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU2 General Description Symbol The SRE80N065FSU2 is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. G The SRE80N065FSU2 package is TO-247. E Features High Breakdown Voltage to 650V Advanced Trench Fields

Datasheet 80A 650V Trench Fieldstop IGBT with FRD SRE80N065FSU2DB General Description Symbol The SRE80N065FSU2DB is a Field Stop Trench C IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, G Converter, etc. The SRE80N065FSU2DB package is TO-247-4. E1 E2 Features High Breakd

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD6 General Description Symbol The SRE80N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD6 package is TO-247. Features Figure 1 Symbol o

VBZE80N06 www.VBsemi.com N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.006 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.008 100 ID (A) Single Configuration D TO-252 G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25