E80N06 datasheet, аналоги, основные параметры

Наименование производителя: E80N06  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 160 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 64 ns

Cossⓘ - Выходная емкость: 335 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0084 Ohm

Тип корпуса: TO263

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Аналог (замена) для E80N06

- подборⓘ MOSFET транзистора по параметрам

 

E80N06 даташит

 ..1. Size:1315K  cn wxdh
 80n06 f80n06 i80n06 e80n06 b80n06 d80n06.pdf pdf_icon

E80N06

80N06/F80N06/I80N06/ E80N06/B80N06/D80N06 80A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 60V Used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with R = 7m DS(on) (Type) G the RoHS standard. 1 ID = 80A 3 S 2 Features Fast Switching High avalanche C

 0.1. Size:961K  sanrise-tech
 sre80n065fsud8.pdf pdf_icon

E80N06

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD8 General Description Symbol The SRE80N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD8 package is TO-247. Features Figure 1 Symbol o

 0.2. Size:1024K  sanrise-tech
 sre80n065fsu.pdf pdf_icon

E80N06

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU General Description Symbol The SRE80N065FSU is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. G The SRE80N065FSU package is TO-247. Features E High Breakdown Voltage to 650V Figure 1 Symbol of SRE80N065F

 0.3. Size:1290K  sanrise-tech
 sre80n065fsu2.pdf pdf_icon

E80N06

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU2 General Description Symbol The SRE80N065FSU2 is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. G The SRE80N065FSU2 package is TO-247. E Features High Breakdown Voltage to 650V Advanced Trench Fields

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... E110N04, E13N50, E20N50, E25N10, E50N06, E630, E640, E740, IRLB4132, ED120N10ZR, EN6005, F10N50, F10N60, F10N70, F10N80, F110N04, DHZ24B31