F10N80 - Даташиты. Аналоги. Основные параметры

F10N80 10A 800V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 800V planar technology which reduce the conduction loss, improve switching I = 10.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)

STF10N80K5 N-channel 800 V, 0.470 typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STF10N80K5 800 V 0.600 9 A 30 W Industry s best RDS(on) 3 2 Industry s best figure of merit (FoM) 1 Ultra-low gate charge TO-220FP 100% avalanche tested Zener-protected Applications F

TM QFET FQAF10N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.7A, 800V, RDS(on) = 1.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fa

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 0.746 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

BRF10N80(BRCS10N80FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited f

SVF10N80F/K 10A 800V N 2 SVF10N80F/K N MOS F-CellTM VDMOS 1 3

MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Techn

MSF10N80A 800V N-Channel MOSFET Description The MSF10N80A is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Int

N N-CHANNEL MOSFET FHF10N80A MAIN CHARACTERISTICS FEATURES ID 10A Low gate charge VDSS 800V Crss ( 20pF) Low Crss (typical 20pF ) Rdson-typ @Vgs=10V 0.72 Fast switching Qg-typ 58nC 100% 100% avalanche tested dv/dt Improved dv/d

SW10N80K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET TO-220F TO-251N TO-252 BVDSS 800V Features ID 10A High ruggedness RDS(ON) 0.58 Low RDS(ON) (Typ 0.58 )@VGS=10V Low Gate Charge (Typ 27nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application LED,Charger,PC Power 1. Gate 2. Drain

SW10N80D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 800V ID 10A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 55nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application LED, Charger, SMPS 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MO

TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N80 / TMPF10N80 TO-220 / TO-220F TMP10N80 / TMPF10N80 RoHS TMP10N

TSF10N80M 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 10.0A,800V,Max.RDS(on)=1.10 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC) minimize on-state resistance, provide superior switching High ruggedness performance,