110N04/F110N04/I110N04/E110N04/B110N04/D110N04160A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs UsedV = 40VDSSadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theR = 3.5mDS(on) TYP)RoHS standard.I = 160AD2 Features Fast Switching Low ON Resistance(Rdson

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF110N060N- MOS / N-CHANNEL POWER MOSFET SIF110N06

July 2017 HRLF110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 42 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci

STF110N10F7, STP110N10F7N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE Power MOSFETs in TO-220FP and TO-220 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max ID PTOTSTF110N10F7 45 A 30 WTAB100 V 0.007 STP110N10F7 110 A 150 W Ultra low on-resistance3 32 21 1 100% avalanche testedTO-220FP TO-220Applications Sw

NTPF110N65S3HFMOSFET Power,N-Channel, SUPERFET III,FRFET650 V, 30 A, 110 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highVDSS RDS(ON) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 110 mW @ 10 V 30 Abalance technology for outstanding low on-resistance and lower gatecharge performance. This advance