FQU20N06L
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQU20N06L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 38
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 17.2
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 9.5
nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06
Ohm
Тип корпуса:
TO251
IPAK
Аналог (замена) для FQU20N06L
FQU20N06L
Datasheet (PDF)
..1. Size:664K fairchild semi
fqd20n06l fqu20n06l.pdf May 2001TMQFETFQD20N06L / FQU20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been es
..2. Size:1051K onsemi
fqu20n06l.pdf Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.1. Size:745K fairchild semi
fqd20n06tf fqd20n06tm fqd20n06 fqu20n06 fqu20n06tu.pdf January 2009QFETFQD20N06 / FQU20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.8A, 60V, RDS(on) = 0.063 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especi
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