DHS044N12U datasheet, аналоги, основные параметры

Наименование производителя: DHS044N12U  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 417 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 120 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 270 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 112 ns

Cossⓘ - Выходная емкость: 1011 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm

Тип корпуса: TOLL

  📄📄 Копировать 

Аналог (замена) для DHS044N12U

- подборⓘ MOSFET транзистора по параметрам

 

DHS044N12U даташит

 ..1. Size:961K  cn wxdh
 dhs044n12u.pdf pdf_icon

DHS044N12U

DHS044N12U 270A 120V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 120V DS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 2.7m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I = 270A D 2 Features Low on resistance Low gate

 5.1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS044N12U

DHS044N12/DHS044N12E 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gate charge

 5.2. Size:819K  cn wxdh
 dhs044n12.pdf pdf_icon

DHS044N12U

DHS044N12 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 120V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 3.7m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gat

 9.1. Size:1350K  cn wxdh
 dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf pdf_icon

DHS044N12U

DHS045N88/DHS045N88F/DHS045N88I/ DHS045N88E/DHS045N88B/DHS045N88D 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... F25N10, DHS042N15, DHS042N15E, DHS042N85P, DHS043N07P, DHS043N85P, DHS044N12, DHS044N12E, AO4468, DHS045N85, DHS045N85B, DHS045N85D, DHS045N85E, DHS045N85F, DHS045N85I, DHS045N88, DHS045N88B