DHS044N12U - аналоги и даташиты транзистора

 

DHS044N12U - Даташиты. Аналоги. Основные параметры


   Наименование производителя: DHS044N12U
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 417 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 270 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 105 nC
   tr ⓘ - Время нарастания: 112 ns
   Cossⓘ - Выходная емкость: 1011 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm
   Тип корпуса: TOLL
 

 Аналог (замена) для DHS044N12U

   - подбор ⓘ MOSFET транзистора по параметрам

 

DHS044N12U Datasheet (PDF)

 ..1. Size:961K  cn wxdh
 dhs044n12u.pdf pdf_icon

DHS044N12U

DHS044N12U270A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 2.7mDS(on) (TYP)time. Which accords with the RoHS standard. 13 SI = 270AD2 Features Low on resistance Low gate

 5.1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS044N12U

DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge

 5.2. Size:819K  cn wxdh
 dhs044n12.pdf pdf_icon

DHS044N12U

DHS044N12160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 3.7mDS(on) (TYP)time. Which accords with the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gat

 9.1. Size:1350K  cn wxdh
 dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf pdf_icon

DHS044N12U

DHS045N88/DHS045N88F/DHS045N88I/DHS045N88E/DHS045N88B/DHS045N88D120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... F25N10 , DHS042N15 , DHS042N15E , DHS042N85P , DHS043N07P , DHS043N85P , DHS044N12 , DHS044N12E , IRF730 , DHS045N85 , DHS045N85B , DHS045N85D , DHS045N85E , DHS045N85F , DHS045N85I , DHS045N88 , DHS045N88B .

History: DHS042N85P | DHS042N15E

 

 
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