Справочник MOSFET. DHS035N10

 

DHS035N10 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DHS035N10
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 227 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 143 nC
   tr ⓘ - Время нарастания: 79 ns
   Cossⓘ - Выходная емкость: 714 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0038 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для DHS035N10

   - подбор ⓘ MOSFET транзистора по параметрам

 

DHS035N10 Datasheet (PDF)

 ..1. Size:988K  cn wxdh
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DHS035N10

DHS035N10&DHS035N10E180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 100VDSSutilizes advanced Split Gate Trench technology, which 2 Dprovides excellent Rdson and low Gate charge at the sameR = 3.2mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1R = 3.0mTO-263DS(on) (TYP)3 S

 7.1. Size:975K  cn wxdh
dhs035n88 dhs035n88e dhs035n88i.pdfpdf_icon

DHS035N10

DHS035N88/DHS035N88E/DHS035N88I175A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionV = 80VDSSThese N-channel enhancement mode power mosfets used2 Dadvanced splite gate trench technology design, providedR =3.6m(TO-220&262)DS(on)(TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard.R = 3.3m(TO-263)DS(on) (TYP)13 SI =175AD

 9.1. Size:775K  cn wxdh
dhs031n07p.pdfpdf_icon

DHS035N10

DHS031N07P100A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 Dadvanced splite gate trench technology design, providedV =68VDSSexcellent Rdson and low gate charge. Which accords withGR =2.9mDS(on) (TYP)the RoHS standard.13 SI Silicon limit= 150AD2 FeaturesIPackage limit 100A= Fas

 9.2. Size:1016K  cn wxdh
dhs030n88 dhs030n88f dhs030n88i dhs030n88e.pdfpdf_icon

DHS035N10

DHS030N88/DHS030N88F/DHS030N88I/DHS030N88E174A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.0mDS(on) (TYP)the RoHS standard.13 SI = 174AD2 Features Fast switching

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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