Справочник MOSFET. DHS046N10D

 

DHS046N10D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DHS046N10D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 160 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 98 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 76 ns
   Cossⓘ - Выходная емкость: 652 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для DHS046N10D

   - подбор ⓘ MOSFET транзистора по параметрам

 

DHS046N10D Datasheet (PDF)

 ..1. Size:1390K  cn wxdh
 dhs046n10 dhs046n10f dhs046n10i dhs046n10e dhs046n10b dhs046n10d.pdf pdf_icon

DHS046N10D

DHS046N10/DHS046N10F/DHS046N10IDHS046N10E/DHS046N10B/DHS046N10D120A 98V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 98VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Feature

 9.1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS046N10D

DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge

 9.2. Size:819K  cn wxdh
 dhs044n12.pdf pdf_icon

DHS046N10D

DHS044N12160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 3.7mDS(on) (TYP)time. Which accords with the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gat

 9.3. Size:1350K  cn wxdh
 dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf pdf_icon

DHS046N10D

DHS045N88/DHS045N88F/DHS045N88I/DHS045N88E/DHS045N88B/DHS045N88D120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DHS025N88F , DHS025N88I , DHS030N88 , DHS030N88E , DHS030N88F , DHS030N88I , DHS046N10 , DHS046N10B , 13N50 , DHS046N10E , DHS046N10F , DHS046N10I , DHS051N10P , DHS052N10 , DHS052N10B , DSE026N10N3A , DSE026N10NA .

 

 
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