DSE050N14N - параметры транзистора MOSFET, его аналоги, datasheet

DSE050N14N Datasheet (PDF)

..1. Size:1036K cn wxdh
dsg052n14n dse050n14n.pdf pdf_icon

DSG052N14N/DSE050N14N180A 135V N-channel Enhancement Mode Power MOSFET1 Description2 D V =135VDSSThis N-channel enhancement mode power MOSFETutilizes advanced Split Gate Trench technology, whichR =3.7mTO-263DS(on) (TYP)Gprovides excellent Rdson and low Gate charge at the same1R =3.9mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.3 SI

9.1. Size:1000K cn wxdh
dsg053n08n3 dse051n08n3.pdf pdf_icon

DSG053N08N3&DSE051N08N3120A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced splite gate trench technology design, providedR = 4.8mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 4.4mT0-263DS(on) (TYP)13 SI = 120AD2 F

9.2. Size:1388K cn wxdh
dse054n10n3 dsg054n10n3.pdf pdf_icon

DSE054N10N3&DSG054N10N3 100V/4.6m/140A N-MOSFET Features Key ParametersVDS Low on resistance 100VRDS(on)typ.TO-263 Low reverse transfer capacitances 4.6mRDS(on)typ.TO-220 100% single pulse avalanche energy test 4.8mID 100% VDS test 140A Pb-Free plating / Halogen-Free / RoHS compliant Vth 3VCiss@10V4912pFQgd 16nCApplications M

9.3. Size:928K cn wxdh
dse058n15na.pdf pdf_icon

DSE058N15NA150A 150V N-channel Enhancement Mode Power MOSFET1 Description2 DV =150VDSSThese N-channel enhancement mode power MOSFETutilizes advanced Split Gate Trench technology, whichG R = 5.0mDS(on) (TYP)provides excellent Rdson and low Gate charge at the same1time. Which accords with the RoHS standard.3 S I = 150AD2 Features Low on resistance Low gat

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .