DHS065N85E - аналоги, даташиты, параметры транзистора

DHS065N85E Datasheet (PDF)

..1. Size:1177K cn wxdh
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DHS065N85/DHS065N85F/DHS065N85IDHS065N85E/DHS065N85B/DHS065N85D100A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 6.5mDS(on) (TYP)the RoHS standard.13 SI = 100AD2 Features

5.1. Size:904K cn wxdh
dhs065n85p.pdf pdf_icon

DHS065N85P80A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.8mDS(on) (TYP)the RoHS standard.13 SI = 80AD2 Features Fast switching Low on resistance Low gate

7.1. Size:672K cn wxdh
dhs065n10p.pdf pdf_icon

DHS065N10P80A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 6.5mDS(on) (TYP)the RoHS standard.13 SI = 80AD2 Features Fast switching Low on resistance Low g

7.2. Size:784K cn wxdh
dhs065n10.pdf pdf_icon

DHS065N1095A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 7.4mDS(on) (TYP)the RoHS standard.13 SI = 95AD2 Features Fast switching Low on resistance Low ga

Другие MOSFET... DHS055N85B , DHS055N85D , DHS055N85E , DHS065N10 , DHS065N10P , DHS065N85 , DHS065N85B , DHS065N85D , IRF540N , DHS065N85F , DHS065N85I , DHS065N85P , DHSJ11N65 , DHSJ13N65 , DHSJ17N65 , DHSJ21N65W , DHSJ21N65Z .