F4N65 datasheet, аналоги, основные параметры
Наименование производителя: F4N65 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8.8 ns
Cossⓘ - Выходная емкость: 55 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
Тип корпуса: TO220F
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Аналог (замена) для F4N65
- подборⓘ MOSFET транзистора по параметрам
F4N65 даташит
..1. Size:1254K cn wxdh
f4n65.pdf 
F4N65 4A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) = 2
0.1. Size:382K kec
kf4n65fm.pdf 
KF4N65FM SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli
0.2. Size:414K kec
kf4n65p f.pdf 
KF4N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power suppli
0.3. Size:376K sisemi
sif4n65d 2.pdf 
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANN
0.4. Size:376K sisemi
sif4n65c 2.pdf 
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANN
0.5. Size:378K sisemi
sif4n65c.pdf 
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANNEL POWER MOSFET SIF4N65C N- MOS / N-CHANN
0.6. Size:378K sisemi
sif4n65d.pdf 
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANN
0.7. Size:809K blue-rocket-elect
brf4n65.pdf 
BRF4N65 Rev.F Aug.-2017 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficien
0.11. Size:642K silan
svf4n65.pdf 
SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior
0.21. Size:758K magnachip
mdf4n65bth.pdf 
MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed
0.22. Size:1173K bruckewell
msf4n65.pdf 
MSF4N65 650V N-Channel MOSFET Description The MSF4N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test
0.23. Size:1197K feihonltd
fhu4n65d fhd4n65d fhp4n65d fhf4n65d.pdf 
N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested
0.25. Size:1195K feihonltd
fhu4n65a fhp4n65a fhd4n65a fhf4n65a.pdf 
N N-CHANNEL MOSFET FHU4N65A/FHP4N65A/FHD4N65A/FHF4N65A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.9 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested
0.26. Size:1331K feihonltd
fhu4n65e fhd4n65e fhp4n65e fhf4n65e.pdf 
N N-CHANNEL MOSFET FHU4N65E/FHD4N65E/FHP4N65E/FHF4N65E MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650 V Crss ( 4.5pF) Low Crss (typical 4.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 18nC 100% 100% avalanche tested dv
0.27. Size:2070K maple semi
slf4n65sv.pdf 
SLF4N65SV 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 4A*, 650V, RDS(on),typ =2.38 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 13nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en-
0.28. Size:1007K samwin
swf4n65k2 swn4n65k2 swd4n65k2.pdf 
SW4N65K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.10 )@VGS=10V RDS(ON) 1.10 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 Application LED, Charger, Adaptor 2 2 3 3 3 1 1. Gate 2
0.29. Size:840K samwin
swf4n65k swi4n65k swd4n65k.pdf 
SW4N65K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 1 )@VGS=10V Low Gate Charge (Typ13 nC) RDS(ON) 1 Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 Application Adapter,LED,Charger, 2 2 2 3 3 3 TV-Power 1 1. Gate 2. Drain 3. Sour
0.30. Size:913K samwin
swn4n65dd swnc4n65dd swf4n65dd swmn4n65dd swd4n65dd swyn4n65dd.pdf 
SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2.4 )@VGS=10V RDS(ON) 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2
0.31. Size:1095K samwin
swf4n65da swn4n65da swd4n65da swnb4n65da.pdf 
SW4N65DA N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 TO-251NX-S4 ID 4A High ruggedness Low RDS(ON) (Typ 3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger, Adaptor, 3 3 3 LED, TV-Pow
0.33. Size:608K trinnotech
tmp4n65az tmpf4n65az.pdf 
TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A
0.34. Size:624K trinnotech
tmp4n65 tmpf4n65.pdf 
TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
0.35. Size:628K trinnotech
tmp4n65z tmpf4n65z.pdf 
TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
0.37. Size:949K huake
smf4n65.pdf 
SMF4N65 650V N-Channnel MOSFET Features 4.0A, 650V, R =2.2 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value
0.38. Size:1386K huashuo
hsd4n65 hsu4n65 hsp4n65 hsf4n65.pdf 
HS4N65 650V 4A N-Channel Planar MOSFET FEATURES General Description RDSON 3.0 @Vgs=10V, Id=2A HS4N65 is Fortunatus high voltage MOSFET family based on Ultra Low gate Charge(typical 13 nC) advanced planar stripe DMOS technology. This advanced Low Crss (typical 5pF) MOSFET family has optimized on-state resistance, and also Fast switching capability provides s
0.39. Size:384K jiejie micro
jmpf4n65bj.pdf 
JMPF4N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 4A Load Switch RDS(ON)
0.40. Size:1098K lonten
lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf 
LNC4N65 LND4N65 LNG4N65 LNH4N65 LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate
0.42. Size:3237K cn puolop
ptp4n65 ptf4n65.pdf 
PTP4 N65 /PTF4 N65 65 0V/4 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S G D S TO-220 TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Funct
0.43. Size:753K cn sps
smirf4n65.pdf 
SMIRF4N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 4A SMIRF4N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.8 (VGS=10V, ID=2A) on-state resistance, provide superior swi
0.44. Size:485K cn minos
mpf4n65.pdf 
Silicon N-Channel Power MOSFET Description The MPF4N65 uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. It can be used in a wide variety of applications. General Features V =4A I =650V DS D R =2 @V =10V,I =2A DS(on)(typ) GS D Schematic diagram Low Crss 4.5pF@25V Fast switching Improved dv/dt capability Application
Другие IGBT... DHSJ13N65, DHSJ17N65, DHSJ21N65W, DHSJ21N65Z, DHSJ25N65F, DSE012N04NA, DSE022N10N3, F4N60, IRF3710, F4N70, F50N06, F50N20, F5N65C, F5N80, F630, F640, F6N90
