F50N06 datasheet, подбор замены

 ..1. Size:1133K  cn wxdh
 50n06 f50n06 i50n06 e50n06 b50n06 d50n06.pdf 

50N06/F50N06/I50N06/ E50N06/B50N06/D50N06 60A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 10.5m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low ga

 0.1. Size:828K  1
 tsp50n06m tsf50n06m.pdf 

TSP50N06M / TSF50N06M 60V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 50A, 60V, RDS(on) = 0.023 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 33nC) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avala

 0.2. Size:670K  fairchild semi
 fqpf50n06l.pdf 

May 2001 TM QFET FQPF50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32.6A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially

 0.3. Size:628K  fairchild semi
 fqpf50n06.pdf 

May 2001 TM QFET FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to

 0.4. Size:63K  kec
 kf50n06p.pdf 

KF50N06P SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction , electronic lamp ballasts based on hal

 0.5. Size:120K  china
 irf50n06.pdf 

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 0.6. Size:1704K  cn wxdh
 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf 

 0.7. Size:202K  inchange semiconductor
 fqpf50n06.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQPF50N06 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIM