F7N80 datasheet, подбор замены

 ..1. Size:1401K  cn wxdh
 f7n80.pdf 

F7N80 7A 800V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 800V planar technology which reduce the conduction loss, improve switching I = 7.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) =1.

 0.1. Size:179K  1
 ssf7n80a.pdf 

 0.2. Size:677K  st
 stf7n80k5 stfi7n80k5.pdf 

STF7N80K5, STFI7N80K5 N-channel 800 V, 0.95 typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes VDS RDS(on)max ID PTOT STF7N80K5 800 V 1.2 6 A 25 W STFI7N80K5 Worldwide best FOM (figure of merit) 3 2 Ultra low gate charge 1 1 2 3 TO-220FP 100% avalanche tested I 2PAKFP

 0.3. Size:766K  fairchild semi
 fqaf7n80.pdf 

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been esp

 0.4. Size:848K  fairchild semi
 fqp7n80c fqpf7n80c.pdf 

TM QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to

 0.5. Size:787K  fairchild semi
 fqpf7n80.pdf 

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been e

 0.6. Size:849K  onsemi
 fqp7n80c fqpf7n80c.pdf 

TM QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to

 0.7. Size:397K  kec
 kf7n80p-f.pdf 

KF7N80P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N80P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power supp

 0.8. Size:300K  sisemi
 sif7n80c.pdf 

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF7N80C N- MOS / N-CHANNEL POWER MOSFET SIF7N80C N- MOS / N-CHANN

 0.9. Size:1072K  blue-rocket-elect
 brf7n80.pdf 

BRF7N80(BRCS7N80FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features Low gate charge Low Crss Fast switching. / Applications DC/DC These devices are

 0.10. Size:392K  silan
 svf7n80t svf7n80f svf7n80kl svf7n80k svf7n80fd.pdf 

 0.11. Size:520K  silan
 svf7n80t svf7n80f.pdf 

SVF7N80T/F 7A 800V N 2 SVF7N80T/F N MOS F-CellTM VDMOS 1 3 AC-DC

 0.12. Size:851K  bruckewell
 msf7n80.pdf 

MSF7N80 800V N-Channel MOSFET Description The MSF7N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrins

 0.13. Size:353K  maple semi
 slp7n80c slf7n80c.pdf 

SLP7N80C/SLF7N80C SLP7N80C/SLF7N80C 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 40nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching Fast

 0.14. Size:725K  samwin
 sw7n80d swf7n80d swu7n80d swj7n80d.pdf 

SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS 800V Features ID 7A High ruggedness RDS(ON) 1.5 Low RDS(ON) (Typ 1.5 )@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED , Charger, SMPS 1. Gate 2. Drain 3. Source

 0.15. Size:754K  samwin
 swf7n80d swu7n80d swj7n80d.pdf 

SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS 800V Features ID 7A High ruggedness RDS(ON) 1.5 Low RDS(ON) (Typ 1.5 )@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED , Charger, SMPS 1. Gate 2. Drain 3. Source

 0.16. Size:1260K  truesemi
 tsp7n80m tsf7n80m.pdf 

TSP7N80M/TSF7N80M 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.0A,800V,Max.RDS(on)=1.6 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 40nC) minimize on-state resistance, provide superior switching High ruggedness performance, and

 0.17. Size:218K  inchange semiconductor
 fqpf7n80c.pdf 

isc N-Channel MOSFET Transistor FQPF7N80C FEATURES Drain-source on-resistance RDS(on) 1.9 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High efficiency switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol