20N50/F20N50/I20N50/E20N5020A 500V N-channel Enhancement Mode Power MOSFET1 DescriptionThese silicon N-channel enhanced vdmosfets, is obtained2 DV = 500VDSSby the self-aligned planar technology which reduce theconduction loss, improve switching performance andR = 0.24DS(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard.I = 20A3 S D

FMI20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack (L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.

FMI20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)