JBE102G - аналоги, параметры транзистора - Справочник транзисторов

JBE102G даташит

..1. Size:1021K jiejie micro
jbe102g.pdf pdf_icon

JBE102G 100V 2.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 206 A RDS(ON) (@ VGS = 10V) 2.3 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics Curr

8.1. Size:1023K jiejie micro
jbe102y.pdf pdf_icon

JBE102Y 100V 3.1mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rgg Tested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 183 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.1 mW Pb-free Lead Plating

8.2. Size:517K jiejie micro
jbe102t.pdf pdf_icon

JBE102T 100V 2.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested 100% UIS Tested, 100% RgTested ID (@ VGS = 10V) (1) 240 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.2 mW

9.1. Size:614K jiejie micro
jbe103t.pdf pdf_icon

JBE103T 100V 3.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.1 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 184 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3 Pb-free Lead Plating mW

Другие MOSFET... JMSH0602AGQ , JMSH0602AK , JMSH0602AKQ , JMSH0602PC , JMSH0602PE , JMSH0602PG , JMSH0602PGQ , JMSH0602PK , P60NF06 , JBE102T , JBE102Y , JBE103T , JBE111P , JBE112Q , JBE112T , JBE113P , JBL083M .