JMSH2010PE - аналоги, параметры транзистора - Справочник транзисторов

JMSH2010PE даташит

..1. Size:1343K jiejie micro
jmsh2010pe.pdf pdf_icon

200V, 109A, 9.1m N-channel Power SGT MOSFET JMSH2010PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 109 A RDS(ON)_Typ(@VGS=10V 9.1 mW Applications Load Switch PWM Application Power Management D G S TO

5.1. Size:1291K jiejie micro
jmsh2010pcq.pdf pdf_icon

200V, 100A, 8.6m N-channel Power Strong MOSFET JMSH2010PCQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 200 V High Current Carrying Capability VGS(th)_Typ 3.0 V Fully Characterized UIS and SOA ID(@VGS=10V) 100 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 8.6 mW AEC-Q101 Qualified Application

5.2. Size:555K jiejie micro
jmsh2010ptl.pdf pdf_icon

JMSH2010PTL 200V 7.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 200 V Low Gate Charge, Qg VGS(th)_Typ 3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 119 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.2 mW Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, I

5.3. Size:1257K jiejie micro
jmsh2010pc.pdf pdf_icon

200V, 96A, 9.3m N-channel Power SGT MOSFET JMSH2010PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 96 A RDS(ON)_Typ(@VGS=10V 9.3 mW Applications Load Switch PWM Application Power Management D G S TO-2